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SEMICONDUCTOR KHB9D0N90N1
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast A
N Q B
switching time, low on resistance, low gate charge and excellent O K
DIM MILLIMETERS
avalanche characteristics. It is mainly suitable for electronic ballast and _
F
A 15.60 + 0.20
B _
switching mode power supplies. 4.80 + 0.20
_
C 19.90 + 0.20
C
J
R
_
I
D 2.00 + 0.20
H
d _
1.00 + 0.20
E _
3.00 + 0.20
_
3.80 + 0.20
FEATURES F
G
G _
3.50 + 0.20
D H _
VDSS(Min.)= 900V, ID= 9A 13.90 + 0.20
E I _
12.76 + 0.20
Drain-Source ON Resistance : J _
23.40 + 0.20
L
d M K 1.5+0.15-0.05
RDS(ON)=1.4 @VGS =10V L _
16.50 + 0.30
M _
1.40 + 0.20
Qg(typ.) =75nC _
P P T N 13.60 + 0.20
O _
9.60 + 0.20
P _
5.45 + 0.30
Q _
3.20 + 0.10
1 2 3 _
R 18.70 + 0.20
T 0.60+0.15-0.05
MAXIMUM RATING (Tc=25 ) TO-3P(N)-E
CHARACTERISTIC SYMBOL KHB9D0N90N1 UNIT
Drain-Source Voltage VDSS 900 V
Gate-Source Voltage VGSS 30 V D
@TC=25 ID 9.0
Drain Current A
Pulsed (Note1) IDP 36
Single Pulsed Avalanche Energy
EAS 900 mJ G
(Note 2)
Repetitive Avalanche Energy
EAR 20.5 mJ
(Note 1)
Peak Diode Recovery dv/dt S
dv/dt 4.5 V/ns
(Note 3)
Drain Power Tc=25 280 W
PD
Dissipation Derate above25 2.22 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 0.45 /W
Thermal Resistance, Case-to-Sink RthCS 0.24 /W
Thermal Resistance, Junction-to-Ambient RthJA 40 /W
2007. 11. 26 Revision No : 2 1/6
KHB9D0N90N1
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 900 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.99 - V/
Drain Cut-off Current IDSS VDS=900V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=4.5A - 1.12 1.4
Dynamic
Total Gate Charge Qg - 75 90
VDS=720V, ID=9.0A
Gate-Source Charge Qgs - 12 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 3.5 -
Turn-on Delay time td(on) - 48 106
VDD=450V,
Turn-on Rise time tr RG=25 , - 70 150
ns
Turn-off Delay time td(off) ID=9.0A - 289 588
tf (Note4,5)
Turn-off Fall time - 117 244
Input Capacitance Ciss - 2663 3462
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 183 238 pF
Reverse Transfer Capacitance Crss - 20 26
Source-Drain Diode Ratings
Continuous Source Current IS - - 9.0
VGS
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