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kma010p20q


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                                  SEMICONDUCTOR                                              KMA010P20Q
                                            TECHNICAL DATA                                   P-Ch Trench MOSFET


  General Description
  It s mainly suitable for battery pack or power management
  in cell phone, and PDA.

  FEATURES                                                                                           H
                                                                                                         T
    VDSS=-20V, ID=-10A.                                                          D       P       G                  L
    Drain-Source ON Resistance.
     : RDS(ON)=14m (Max.) @ VGS=-4.5V, ID=-10A.
     : RDS(ON)=24m (Max.) @ VGS=-2.5V, ID=-7.6A.                                     A
                                                                                                              DIM       MILLIMETERS
                                                                                                               A               _
                                                                                                                          4.85 + 0.2
                                                                                                               B1              _
                                                                                                                          3.94 + 0.2
                                                                             8               5                 B2              _
                                                                                                                          6.02 + 0.3
                                                                                                               D               _
                                                                                                                           0.4 + 0.1
                                                                                                     B1 B2     G        0.15+0.1/-0.05
                                                                                                               H               _
                                                                                                                          1.63 + 0.2
                                                                             1               4                 L               _
                                                                                                                          0.65 + 0.2
                                                                                                               P             1.27
                                                                                                               T        0.20+0.1/-0.05


  MAXIMUM RATING (Ta=25                 )
              CHARACTERISTIC                  SYMBOL        RATING    UNIT
   Drain-Source Voltage                           VDSS        -20      V
                                                                                                      FLP-8
   Gate-Source Voltage                            VGSS         12      V
                             DC                    ID *        10
   Drain Current                                                       A
                             Pulsed (Note1)        IDP*        48
   Source-Drain Diode Current                       IS *      -2.3     A

                             Ta=25                            1.6
   Drain Power Dissipation                         PD *                W
                             Ta=100                          0.625
   Maximum Junction Temperature                     Tj        150
   Storage Temperature Range                       Tstg     -55 150
   Thermal Resistance, Junction to Ambient        RthJA *     80       /W
  * : Surface Mounted on 1     1 FR4 Board, t 5sec.




2007. 3. 22                     Revision No : 1                                                                                          1/5
                                                              KMA010P20Q

 ELECTRICAL CHARACTERISTICS (Ta=25                            )
              CHARACTERISTIC                       SYMBOL                  TEST CONDITION                MIN.   TYP.   MAX.   UNIT
   Static
   Drain-Source Breakdown Voltage                   BVDSS          ID=-250 A, VGS=0V,                    -20     -      -      V
                                                                   VGS=0V, VDS=-20V                       -      -      -1
   Drain Cut-off Current                            IDSS                                                                          A
                                                                   VGS=0V, VDS=-16V, Tj=70                -      -      -5
   Gate Threshold Voltage                            Vth           VDS=VGS, ID=-250 A                    -0.6    -      -      V
   Gate Leakage Current                             IGSS           VGS=   12V, VDS=0V                     -      -     100    nA
                                                                   VGS=-4.5V, ID=-10A       (Note 1)      -      11     14
   Drain-Source ON Resistance                      RDS(ON)                                                                    m
                                                                   VGS=-2.5V, ID=-7.6A      (Note 1)      -      18     24
   ON State Drain Current                           ID(ON)         VGS=-4.5V, VDS=-5V       (Note 1)     -48     -      -      A
   Forward Transconductance                             gfs        VDS=-5V, ID=-10A       (Note 1)        -      31     -      S
   Source-Drain Diode Forward Voltage               VSD            IS=-10A, VGS=0V       (Note 1)         -      -     -1.1    V
   Dynamic (Note 2)
   Total Gate Charge                                    Qg                                                -      36     -
                                                                   VDS=-10V, RD=1.0
   Gate-Source Charge                                Qgs                                                  -      5      -      nC
                                                                   VGS=-4.5V                   (Fig.1)
   Gate-Drain Charge                                 Qgd                                                  -      13     -
   Turn-on Delay time                               td(on)                                                -      10     -
   Turn-on Rise time                                    tr         VDD=-10V, RD=1.0 ,                     -      72     -
                                                                                                                               ns
   Turn-off Delay time                              td(off)        VGS=-4.5V, RG=6             (Fig.2)    -      78     -
   Turn-off Fall time                                   tf                                                -     108     -

  Note 1) Pulse test : Pulse width 300   , Duty Cycle        2%.
  Note 2) Guaranteed by design. Not subject to production testing.




2007. 3. 22                      Revision No : 1                                                                                      2/5
                                KMA010P20Q




2007. 3. 22   Revision No : 1                3/5
                                KMA010P20Q




2007. 3. 22   Revision No : 1                4/5
                                KMA010P20Q




2007. 3. 22   Revision No : 1                5/5



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