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SEMICONDUCTOR KMA3D6N20SA
TECHNICAL DATA N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
E
time, low on resistance, low gate charge and excellent avalanche L B L
characteristics. It is mainly suitable for portable equipment. DIM MILLIMETERS
_
A 2.93 + 0.20
B 1.30+0.20/-0.15
C 1.30 MAX
D
2 3 D 0.40+0.15/-0.05
A
G
FEATURES E 2.40+0.30/-0.20
H
1 G 1.90
VDSS=20V, ID=3.6A H 0.95
J 0.13+0.10/-0.05
Drain-Source ON Resistance K 0.00 ~ 0.10
RDS(ON)=60m (Max.) @ VGS=4.5V L 0.55
P P
M 0.20 MIN
RDS(ON)=120m (Max.) @ VGS=2.5V N 1.00+0.20/-0.10
N
C
P 7
J
Super Hige Dense Cell Design
M
K
SOT-23
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL N-Ch UNIT
Drain-Source Voltage VDSS 20 V
Gate-Source Voltage VGSS 12 V
DC ID 3.6
Drain Current A
Pulsed IDP 14 KNC
Drain-Source-Diode Forward Current IS 1.25 A
TA=25 1.25
Drain Power Dissipation PD W
TA=70 0.8
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Ambient RthJA 100 /W
Note : Surface Mounted on FR4 Board, t 10sec.
PIN CONNECTION (TOP VIEW)
D 3
3
2 1 2 1
G S
2007. 4. 17 Revision No : 0 1/5
KMA3D6N20SA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS IDS=250 A, VGS=0V, 20 - - V
Drain Cut-off Current IDSS VGS=0V, VDS=16V - - 1 A
Gate Leakage Current IGSS VGS= 10V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 0.6 0.9 1.5 V
VGS=4.5V, ID=2.5A - 32 45
Drain-Source ON Resistance RDS(ON)* m
VGS=2.5V, ID=2A - 50 65
On-State Drain Current ID(ON)* VGS=4.5V, VDS=5V 10 - - A
Forward Transconductance gfs* VDS=5V, ID=3A - 8 - S
Dynamic
Input Capaclitance Ciss - 641 -
Ouput Capacitance Coss VDS=15V, VGS= 0V, f=1MHz, - 135 - pF
Reverse Transfer Capacitance Crss - 101 -
Total Gate Charge Qg* - 9.1 -
Gate-Source Charge Qgs* VDS=10V, VGS=4.5V, ID=3.5A - 1.4 - nC
Gate-Drain Charge Qgd* - 3.2 -
Turn-On Delay Time td(on)* - 19.6 -
Turn-On Rise Time tr* VDD=10V, VGS=4.5V - 4 -
ns
Turn-Off Delay Time td(off)* ID=1A, RG=6 (NOTE 1)
- 26 -
Turn-Off Fall Time tf* - 15.7 -
Source-Drain Diode Ratings
Source-Drain Forward Voltage VSDF* VGS=0V, IDR=1.25A - 0.81 1.2 V
NOTE 1> * : Pulse Test : Pulse width <300 , Duty cycle < 2%
2007. 4. 17 Revision No : 0 2/5
KMA3D6N20SA
Fig1. ID - VDS Fig2. RDS(on) - ID
Drain Source On Resistance RDS(ON) (m)
14 100
10V,3V,2.8V Common Source
2.6V Tc=25 C
Pulse Test
Drain Current ID (A)
10 2.4V
50 VGS=4.5V
6 2.2V
VGS=10V
VGS=2.0V
2
0 0
0 4 8 12 16 20 0 4 8 12 16 20
Drain - Source Voltage VDS (V) Drain - Current ID (A)
Fig3. ID - VGS Fig4. RDS(on)-Tj
12 Common Source 80 Common Source
VDS=5V VGS=4.5V, ID=2.5A
On-Resistance RDS(ON) (m)
Normalized Drain-Source
10 Pulse Test Pulse Test
Drain Current ID (A)
60
8
6 40
125 C
4
-55 C 20
25 C
2
0 0
0 1 2 3 4 5 -75 -50 -25 0 25 50 75 100 125 150
Gate-Source Volatage VGS (V) Junction Temperature Tj ( C)
Fig5. Vth-Tj Fig6. IS-VSDF
5 Common Source 10
Common Source
Gate Threshold Voltage Vth (V)
VGS=VDS Tc= 25 C
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