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                                  SEMICONDUCTOR                                 KMA4D5P20XA
                                        TECHNICAL DATA                          P-CH Trench MOSFET


  General Description

    This Trench MOSFET has better characteristics, such as fast switching
  time, low on resistance, low gate charge and excellent avalanche
  characteristics. It is mainly suitable for cellular phone and netebook
  computer power management and other battery powered circuits.

  FEATURES
    VDSS=-20V, ID=-4.5A.
    Drain-Source ON Resistance.
    : RDS(ON)=60m (Max.) @ VGS=-4.5V
    : RDS(ON)=110m (Max.) @ VGS=-2.5V




  MAXIMUM RATING (Ta=25                 Unless otherwise noted)
              CHARACTERISTIC                      SYMBOL       RATING    UNIT
   Drain-Source Voltage                                 VDSS     -20      V
   Gate-Source Voltage                                  VGSS       12     V
                                   DC                   I D*     -4.5     A
   Drain Current
                                   Pulsed               IDP*     -16      A
   Continuous Source Current                             IS      -1.3     A
                                   Ta=25                         2.0
   Drain Power Dissipation                              P D*              W
                                   Ta=70                         1.3
   Maximum Junction Temperature                          Tj      150
   Storage Temperature Range                            Tstg   -55 150
   Thermal Resistance, Junction to Ambient          RthJA*      62.5      /W
   * Surface Mounted on 1    1 FR4 Board, t      5sec




2008. 7. 24                    Revision No : 1                                                       1/4
                                                         KMA4D5P20XA

 ELECTRICAL CHARACTERISTICS (Ta=25                              Unless otherwise noted)
              CHARACTERISTIC                        SYMBOL                   TEST CONDITION          MIN.   TYP.   MAX.   UNIT
   Static
   Drain-Source Breakdown Voltage                    BVDSS           VGS=0V, IDS=-250 A,             -20     -      -      V
                                                                     VGS=0V, VDS=-20V                 -      -      -1
   Drain Cut-off Current                              IDSS                                                                 A
                                                                     VGS=0V, VDS=-20V, Tj=70          -      -      -5
   Gate Leakage Current                               IGSS           VGS=   12V, VDS=0V               -      -      100   nA
   Gate Threshold Voltage                             Vth*           VDS=VGS, ID=-250 A              -0.6    -     -1.3    V
                                                                     VGS=-4.5V, ID=-4.5A              -      49     60
   Drain-Source ON Resistance                       RDS(ON)*                                                              m
                                                                     VGS=-2.5V, ID=-3.3A              -      85    110
   Forward Transconductance                           gfs*           VDS=-5V, ID=-4.5A                -     2.5     -      S
   Dynamic
   Input Capacitance                                  Ciss                                            -     481     -
   Ouput Capacitance                                  Coss           VDS=-10V, VGS=0V, f=1MHz         -     220     -      pF
   Reverse Transfer Capacitance                       Crss                                            -     145     -
   Total Gate Charge                                  Qg*                                             -     4.7     -
   Gate-Source Charge                                 Qgs*           VDD=-10V, VGS=-4.5V, ID=-4.5A    -     0.8     -      nC
   Gate-Drain Charge                                 Qgd*                                             -     1.1     -
   Turn-on Delay time                                td(on)*                                          -      12     -
                                                                     VDD=-10V, VGS=-4.5V,
   Turn-on Rise time                                   tr*                                            -      28     -
                                                                     ID=-4.5A, RG=6.0                                      ns
   Turn-off Delay time                               td(off)*                                         -      37     -
   Turn-off Fall time                                  tf*                                            -      40     -
   Source-Drain Diode Ratings
   Source Drain Forward Voltage                      VSDF*           VGS=0V, IDR=-1.7A                -     -0.8   -1.3    V

   Note ) *Pulse Test : Pulse Width 300    , Duty Cycle         2%




2008. 7. 24                       Revision No : 1                                                                                2/4
                                KMA4D5P20XA




2008. 7. 24   Revision No : 1                 3/4
                                KMA4D5P20XA




2008. 7. 24   Revision No : 1                 4/4



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