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SEMICONDUCTOR KMB050N60PA
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
It s mainly suitable for low viltage applications such as automotive, A
O
C
DC/DC converters and a load switch in battery powered applications
F
E G DIM MILLIMETERS
A _
9.9 + 0.2
B
B 15.95 MAX
FEATURES Q C 1.3+0.1/-0.05
VDSS= 60V, ID= 50A I D _
0.8 + 0.1
E _
3.6 + 0.2
Drain-Source ON Resistance : K _
P F 2.8 + 0.1
RDS(ON)=18m (Max.) @VGS = 10V M G 3.7
L
H 0.5+0.1/-0.05
J I 1.5
D J _
13.08 + 0.3
H 1.46
MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted) N N K
_
L 1.4 + 0.1
CHARACTERISTIC SYMBOL RATING UNIT M _
1.27 + 0.1
N _
2.54 + 0.2
Drain-Source Voltage VDSS 60 V O _
4.5 + 0.2
1 2 3 P _
2.4 + 0.2
1. GATE
Gate-Source Voltage VGSS 25 V 2. DRAIN Q _
9.2 + 0.2
3. SOURCE
DC I D* 50 A
Drain Current
Pulsed (Note 1) IDP 200 A
TO-220AB
Drain-Source Diode Forward Current IS 50 A
Drain Power Dissipation PD* 25 120 W
Maximum Junction Temperature Tj -55 175
Storage Temperature Range Tstg -55 175
Note1) Pulse Test : Pulse width 10 S Duty cycle 1%
Thermal Characteristics
CHARACTERISTIC SYMBOL RATING UNIT
Thermal Resistance, Junction-to-Ambient RthJA 62.5 /W
Thermal Resistance, Junction-to-Case RthJC 1.24 /W
Equivalent Circuit
D
G
S
2007. 8. 9 Revision No : 1 1/6
KMB050N60PA
MOSFET Electrical Characteristics (Ta=25 Unless otherwise noted)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 60 - - V
Drain Cut-off Current IDSS VDS=60V, VGS=0V, - - 1 A
Gate Leakage Current IGSS VGS= 25V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=25A - 16 18
Forward Transconductance gFS VDS=25V, ID=25A - 22 -
Dynamic
Input Capacitance Ciss - 1050 1365
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 70 90 pF
Reverse Transfer Capacitance Crss - 460 600
Total Gate Charge Qg VDS= 48V, - 49 59
Gate-Source Charge Qgs VGS= 10V, - 10 -
nC
Gate-Drain Charge Qgd ID=25A (Note1,2) - 13 -
Turn-On Delay Time td(on) - 20 50
VDD= 30V
Turn-On Rise Time tr - 100 210
ID=25A
Turn-Off Delay Time td(off) - 80 170 ns
RG= 25 (Note1,2)
Turn-Off Fall Time tf - 85 185
Note 1) Pulse Test : Pulse width 10 s, Duty Cycle 1%.
Note 2) Essentially Independent of Operating Temperature.
DIODE Electrical Characteristics (Ta=25 Unless otherwise noted)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Diode Forward Voltage VSD ISD=50A, VGS=0V - - 1.5 V
Reverse Recovery Time Trr VGS=0V, IS=50A, dIF/dt=100A/ s - 50 -
Marking
1 KMB
050N60P
A 701 2
1 PRODUCT NAME
2 LOT NO
2007. 8. 9 Revision No : 1 2/6
KMB050N60PA
Fig 1. ID - VDS Fig 2. ID - VGS
50 100
10 6 5
4.5 25
15 Tc=-55 C
40 80 100
Drain Current ID (A)
Drain Current ID (A)
30 4 60
20 40
3.5
10 20
VGS=3V
0 0
0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10
Drain - Source Voltage VDS (V) Drain - Source Voltage VGS (V)
Fig 3. BVDSS - Tj Fig 4. RDS(ON) - ID
Normalized Breakdown Voltage BVDSS
1.2 0.05
VGS = 0V
On - Resistance RDS(ON) ()
IDS = 250
0.04
1.1
VGS = 10V
0.03
1.0 VGS = 20V
0.02
0.9
0.01
0.8 0.00
-100 -50 0 50 100 150 200 0 50 100 150 200
Junction Temperature Tj ( C ) Drain Current ID (A)
Fig 5. IS - VSD Fig 6. RDS(ON) - Tj
2.5
VGS = 0V VGS = 10V
Reverse Drain Current IS (A)
2
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