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                                   SEMICONDUCTOR                                                          KMB054N40DB
                                           TECHNICAL DATA                                                         N-Ch Trench MOSFET


  General Description

  This Trench MOSFET has better characteristics, such as fast switching
  time, low on resistance, low gate charge and excellent avalanche
                                                                                                      A                          K            DIM MILLIMETERS
  characteristics. It is mainly suitable for Back-light Inverter and Power                            C                 D             L
                                                                                                                                               A         _
                                                                                                                                                   6.60 + 0.20
                                                                                                                                               B         _
                                                                                                                                                    6.10 + 0.20
  Supply.                                                                                                                                      C         _
                                                                                                                                                   5.34 + 0.30
                                                                                                                                               D         _
                                                                                                                                                    0.70 + 0.20
                                                                                                                        B                      E         _
                                                                                                                                                   2.70 + 0.15
                                                                                                                                               F         _
                                                                                                                                                    2.30 + 0.10
                                                                                                                                               G   0.96 MAX
  FEATURES                                                                                                                                     H   0.90 MAX
                                                                                         H
                                                                                                                    J                          J         _
                                                                                                                                                    1.80 + 0.20
    VDSS=40V, ID=54A.                                                                                                   E
                                                                                                                                               K         _
                                                                                                                                                    2.30 + 0.10
                                                                                                  G                                       N
                                                                                                                                                         _
    Low Drain-Source ON Resistance.                                                                                                            L   0.50 + 0.10
                                                                                                  F       F                           M        M         _
                                                                                                                                                    0.50 + 0.10
     : RDS(ON)=8.5m (Max.) @ VGS=10V                                                                                                           N    0.70 MIN

     : RDS(ON)=11m (Max.) @ VGS=4.5V
    Super High Dense Cell Design.                                                             1       2       3                1. GATE
                                                                                                                               2. DRAIN
    High Power and Current Handling Capability.                                                                                3. SOURCE




  MAXIMUM RATING (Ta=25                   Unless otherwise Noted)
                                                                                                                            DPAK (1)
                   CHARACTERISTIC                         SYMBOL         N-Ch     UNIT
   Drain-Source Voltage                                         VDSS      40       V
   Gate-Source Voltage                                          VGSS       20      V
                                                                                             Marking
                               DC@TC=25         (Note1)          ID       54
   Drain Current                                                                   A                                              Type Name
                               Pulsed           (Note2)         IDP       100
   Drain-Source-Diode Forward Current                            IS       100      A
                               @TC=25           (Note1)                   45                                        KMB
   Drain Power Dissipation                                       PD                W                               054N40
                               @Ta=25           (Note2)                   3.1                                     DB                   Lot No

   Maximum Junction Temperature                                  Tj       150
   Storage Temperature Range                                    Tstg    -55 150
   Thermal Resistance, Junction to Case        (Note1)          RthJC     2.8      /W
   Thermal Resistance, Junction to Ambient (Note2)              RthJA     40       /W
  Note 1) RthJC means that the infinite heat sink is mounted.
  Note 2) Surface Mounted on 1       1 Pad of 2 oz copper.


  PIN CONNECTION (TOP VIEW)
                   D                                      2
                   2




                                                   1      3
              1           3
              G           S



2008. 6. 10                      Revision No : 0                                                                                                                  1/5
                                                         KMB054N40DB

 ELECTRICAL CHARACTERISTICS (Ta=25                              )
              CHARACTERISTIC                        SYMBOL                  TEST CONDITION     MIN.   TYP.   MAX.   UNIT
   Static
   Drain-Source Breakdown Voltage                    BVDSS          VGS=0V, ID=250 A            40     -       -     V
   Drain Cut-off Current                              IDSS          VGS=0V, VDS=32V             -      -      1         A
   Gate Leakage Current                               IGSS          VGS=   20V, VDS=0V          -      -      100   nA
   Gate Threshold Voltage                             Vth           VDS=VGS, ID=250 A           1     1.9     3      V
                                                                    VGS=10V, ID=14A             -     6.5     8.5
   Drain-Source ON Resistance                       RDS(ON)*        VGS=4.5V, ID=11A            -     8.5     11    m
                                                                    VGS=10V, ID=14A, Tj=125     -     10.4    14
   Forward Transconductance                           gfs*          VDS=10V, ID=20A             -      58      -     S
   Dynamic
   Input Capacitance                                  Ciss                                      -     1280     -
   Ouput Capacitance                                  Coss          VDS=20V, f=1MHz, VGS=0V     -     250      -     pF
   Reverse Transfer Capacitance                       Crss                                      -     125      -
                                  VGS=10V             Qg*                                       -     25.4     -
   Total Gate Charge
                                  VGS=5V              Qg*                                       -     13.8     -
                                                                    VDS=20V, VGS=10V, ID=14A                         nC
   Gate-Source Charge                                Qgs*                                       -     5.7      -
   Gate-Drain Charge                                 Qgd*                                       -     5.4      -
   Turn-On Delay Time                                td(on)*                                    -      19      -
   Turn-On Rise Time                                   tr*          VDD=20V, VGS=10V            -      16      -
                                                                                                                     ns
   Turn-Off Delay Time                               td(off)*       ID=1A, RG=6                 -      60      -
   Turn-Off Fall Time                                  tf*                                      -      14      -
   Source-Drain Diode Ratings
   Source-Drain Forward Voltage                      VSDF*          VGS=0V, IS=14A              -     0.8     1.2    V

   Note>* Pulse Test : Pulse width <300    , Duty cycle < 2%




2008. 6. 10                       Revision No : 0                                                                           2/5
                                                                                                              KMB054N40DB


                                                                    Fig1. ID - VDS                                                                                                                 Fig2. RDS(ON)-ID




                                                                                                                           Drain Source On Resistance RDS(ON) (m)
                                        100                                                                                                                            30
                                                  VGS=10V       6.0V         5.0V
                                                                                                                                                                                  Ta=25 C
                                                                                                                  4.5V
                                        80
        Drain Current ID (A)




                                        60
                                                                                                                                                                       15
                                                                                                                  4.0V
                                        40                                                                                                                                                                    VGS=4.5V


                                        20                                                                        3.5V
                                                                                                                                                                                                              VGS=10V

                                         0                                                                                                                              0
                                              0         0.5              1               1.5              2          2.5                                                    0               6           12          18             24     30


                                                          Drain - Source Voltage VDS (V)                                                                                                          Drain - Current ID (A)



                                                                    Fig3. ID - VGS                                                                                                                Fig4. RDS(on) - Tj
                                                                                                                              Drain-Source On-Resistance RDS(ON) (m)



                                        100                                                                                                                            20
                                                  VDS=5V                                                                                                                        VGS=10V, ID=14A
                                         80                                                                                                                            16
       Drain Current ID (A)




                                         60                                                                                                                            12


                                         40                                                                                                                             8

                                                                             25 C
                                         20                                                                                                                             4
                                                                Ta=125 C                        -55 C

                                          0                                                                                                                             0
                                              1     1.5         2        2.5         3              3.5       4      4.5                                                    -75     -50     -25     0        25   50         75   100 125 150


                                                        Gate Source Volatage VGS (V)                                                                                                        Junction Temperature Tj ( C )




                                                                    Fig5. Vth - Tj                                                                                                                  Fig6. IS - VSDF

                                          5                                                                                                                            1000
       Gate Threshold Voltage Vth (V)




                                                  VGS=VDS
                                                                                                                            Reverse Drain Current IS (A)




                                                  ID=250



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