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SEMICONDUCTOR KMB054N40IA
TECHNICAL DATA N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for Back-light Inverter and Power
Supply.
FEATURES
VDSS=40V, ID=54A.
Low Drain-Source ON Resistance.
: RDS(ON)=8.5m (Max.) @ VGS=10V
: RDS(ON)=11m (Max.) @ VGS=4.5V
Super High Dense Cell Design.
High Power and Current Handling Capability.
MAXIMUM RATING (Ta=25 Unless otherwise Noted)
CHARACTERISTIC SYMBOL N-Ch UNIT
Drain-Source Voltage VDSS 40 V
Gate-Source Voltage VGSS 20 V
DC@TC=25 (Note1) ID 54
Drain Current A
Pulsed (Note2) IDP 100
Drain-Source-Diode Forward Current IS 100 A
@TC=25 (Note1) 45
Drain Power Dissipation PD W
@Ta=25 (Note2) 3.1
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Case (Note1) RthJC 2.8 /W
Thermal Resistance, Junction to Ambient (Note2) RthJA 40 /W
Note 1) RthJC means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1 1 Pad of 2 oz copper.
PIN CONNECTION (TOP VIEW)
2009. 7. 30 Revision No : 0 1/5
KMB054N40IA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250 A 40 - - V
Drain Cut-off Current IDSS VGS=0V, VDS=32V - - 1 A
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1 1.9 3 V
VGS=10V, ID=14A - 6.5 8.5
Drain-Source ON Resistance RDS(ON)* VGS=4.5V, ID=11A - 8.5 11 m
VGS=10V, ID=14A, Tj=125 - 10.4 14
Forward Transconductance gfs* VDS=10V, ID=20A - 58 - S
Dynamic
Input Capacitance Ciss - 1280 -
Ouput Capacitance Coss VDS=20V, f=1MHz, VGS=0V - 250 - pF
Reverse Transfer Capacitance Crss - 125 -
VGS=10V Qg* - 25.4 -
Total Gate Charge
VGS=5V Qg* - 13.8 -
VDS=20V, VGS=10V, ID=14A nC
Gate-Source Charge Qgs* - 5.7 -
Gate-Drain Charge Qgd* - 5.4 -
Turn-On Delay Time td(on)* - 19 -
Turn-On Rise Time tr* VDD=20V, VGS=10V - 16 -
ns
Turn-Off Delay Time td(off)* ID=1A, RG=6 - 60 -
Turn-Off Fall Time tf* - 14 -
Source-Drain Diode Ratings
Source-Drain Forward Voltage VSDF* VGS=0V, IS=14A - 0.8 1.2 V
Note>* Pulse Test : Pulse width <300 , Duty cycle < 2%
2009. 7. 30 Revision No : 0 2/5
KMB054N40IA
2009. 7. 30 Revision No : 0 3/5
KMB054N40IA
2009. 7. 30 Revision No : 0 4/5
KMB054N40IA
2009. 7. 30 Revision No : 0 5/5
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