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SEMICONDUCTOR KMB060N60PA/FA
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
KMB060N60PA
It s mainly suitable for low viltage applications such as automotive, A
O
C
DC/DC converters and a load switch in battery powered applications
F
E G DIM MILLIMETERS
A _
9.9 + 0.2
B
B 15.95 MAX
FEATURES Q C 1.3+0.1/-0.05
VDSS= 60V, ID= 60A I D _
0.8 + 0.1
E _
3.6 + 0.2
Drain-Source ON Resistance : K _
P F 2.8 + 0.1
RDS(ON)=14m (Max.) @VGS = 10V M G 3.7
L
H 0.5+0.1/-0.05
J I 1.5
D J _
13.08 + 0.3
H 1.46
MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted) N N K
_
L 1.4 + 0.1
RATING M _
1.27 + 0.1
CHARACTERISTIC SYMBOL UNIT N _
2.54 + 0.2
KMB060N60PA KMB060N60FA _
O 4.5 + 0.2
Drain-Source Voltage VDSS 60 V 1 2 3 P _
2.4 + 0.2
1. GATE
2. DRAIN Q _
9.2 + 0.2
3. SOURCE
Gate-Source Voltage VGSS 25 V
DC ID* 60 60* A
Drain Current
Pulsed (Note 1) IDP 240 240* A TO-220AB
Drain-Source Diode Forward Current IS 60 A
Drain Power Dissipation PD* 25 150 51 W KMB060N60FA
A C
Maximum Junction Temperature Tj -55 175
Storage Temperature Range Tstg -55 175 F
O
Note1) Pulse Test : Pulse width 10 S Duty cycle 1% E DIM MILLIMETERS
B
*Drain Current Iimited by maximum junction temperature A _
10.16 + 0.2
G
B _
15.87 + 0.2
C _
2.54 + 0.2
D _
0.8 + 0.1
Thermal Characteristics E _
3.18 + 0.1
K
F _
3.3 + 0.1
RATING
CHARACTERISTIC SYMBOL UNIT G _
12.57 + 0.2
L M
KMB060N60PA KMB060N60FA R H _
0.5 + 0.1
J
J _
13.0 + 0.5
Thermal Resistance, Junction-to-Ambient RthJA 62.5 /W K _
3.23 + 0.1
D
RthJC L 1.47 MAX
Thermal Resistance, Junction-to-Case 1.0 2.9 /W
M 1.47 MAX
N N H
N _
2.54 + 0.2
O _
6.68 + 0.2
Q _
4.7 + 0.2
1. GATE
2. DRAIN R _
2.76 + 0.2
Q
1 2 3
3. SOURCE
Equivalent Circuit
D
TO-220IS (1)
G
S
2008. 1. 4 Revision No : 4 1/7
KMB060N60PA/FA
MOSFET Electrical Characteristics (Ta=25 Unless otherwise noted)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 60 - - V
Drain Cut-off Current IDSS VDS=60V, VGS=0V, - - 1 A
Gate Leakage Current IGSS VGS= 15V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=30A - 11.5 14
Forward Transconductance gFS VDS=15V, ID=30A - 20 -
Dynamic
Input Capacitance Ciss - 2000 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 360 - pF
Reverse Transfer Capacitance Crss - 125 -
Total Gate Charge Qg - 70 -
VDS= 48V, VGS= 4.5V,
Gate-Source Charge Qgs - 15 - nC
ID=30A (Note1,2)
Gate-Drain Charge Qgd - 20 -
Turn-On Delay Time td(on) - 35 -
Turn-On Rise Time tr - 220 -
VDD= 30V, ID=30A, RG= 25 ns
Turn-Off Delay Time td(off) - 55 -
Turn-Off Fall Time tf - 30 -
Note 1) Pulse Test : Pulse width 10 s, Duty Cycle 1%.
Note 2) Essentially Independent of Operating Temperature.
DIODE Electrical Characteristics (Ta=25 Unless otherwise noted)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Diode Forward Voltage VSD ISD=60A, VGS=0V - - 1.5 V
Reverse Recovery Time Trr VGS=0V, IS=60A, dIF/dt=100A/ s - 110 -
Marking
1 KMB
1 KMB
060N60P 060N60F
A 713 2
A 701 2
1 PRODUCT NAME
2 LOT NO
2008. 1. 4 Revision No : 4 2/7
KMB060N60PA/FA
Fig 1. ID - VDS Fig 2. RDS(ON) - ID
Drain Source On Resistance RDS(ON) ()
180 25
Common Source Common Source
Tc=25 C VGS=5V Tc=25 C
Pulse Test Pulse Test
150 20
Drain Current ID (A)
4V
120 3.5V 15
VGS=10V
80 4.5V 10
40 3V 5
2.5V
0 0
0 2 4 6 8 10 0 10 20 30 40 50
Drain - Source Voltage VDS (V) Drain Current ID (A)
Fig 3. ID - VGS Fig 4. RDS(ON) - Tj
200 2.2
VGS = 10V
IDS = 30A
Normalized On Resistance
160 1.8
Drain Current ID (A)
120 1.4
VGS=15V
80 1.0
40 0.6
0 0.2
0 2 4 6 8 10 -50 0 50 100 150
Gate - Source Voltage VGS (V) Junction Temperature Tj ( C)
Fig 5. Vth - Tj Fig 6. IDR - VDSF
1.4
VDS = VGS VGS = 0
Reverse Drain Current IS (A)
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