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SEMICONDUCTOR KMB080N75PA
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
It s mainly suitable for low voltage applications such as automotive, A
O
C
DC/DC converters and a load switch in battery powered applications
F
E G DIM MILLIMETERS
A _
9.9 + 0.2
B
B 15.95 MAX
FEATURES Q C 1.3+0.1/-0.05
VDSS= 75V, ID= 80A I D _
0.8 + 0.1
E _
3.6 + 0.2
Drain-Source ON Resistance : K _
P F 2.8 + 0.1
RDS(ON)=12m (Max.) @VGS = 10V M G 3.7
L
H 0.5+0.1/-0.05
J I 1.5
D J _
13.08 + 0.3
H 1.46
MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted) N N K
_
L 1.4 + 0.1
CHARACTERISTIC SYMBOL RATING UNIT M _
1.27 + 0.1
N _
2.54 + 0.2
Drain-Source Voltage VDSS 75 V O _
4.5 + 0.2
1 2 3 P _
2.4 + 0.2
1. GATE
Gate-Source Voltage VGSS 25 V 2. DRAIN Q _
9.2 + 0.2
3. SOURCE
DC I D* 80 A
Drain Current
Pulsed (Note 1) IDP 320 A
TO-220AB
Drain-Source Diode Forward Current IS 80 A
Drain Power Dissipation PD* 25 300 W
Maximum Junction Temperature Tj -55 175
Storage Temperature Range Tstg -55 175
Note1) Pulse Test : Pulse width 10 S Duty cycle 1%
Thermal Characteristics
CHARACTERISTIC SYMBOL RATING UNIT
Thermal Resistance, Junction-to-Ambient RthJA 62.5 /W
Thermal Resistance, Junction-to-Case RthJC 0.5 /W
Equivalent Circuit
D
G
S
2007. 10. 31 Revision No : 2 1/6
KMB080N75PA
MOSFET Electrical Characteristics (Ta=25 Unless otherwise noted)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 75 - - V
Drain Cut-off Current IDSS VDS=75V, VGS=0V, - - 10 A
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2 - 4 V
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=40A - 10 12
Forward Transconductance gFS VDS=15V, ID=40A - 20 -
Dynamic
Input Capacitance Ciss - 3700 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 730 - pF
Reverse Transfer Capacitance Crss - 240 -
Total Gate Charge Qg VDS= 60V, - 117 -
Gate-Source Charge Qgs VGS= 10V, - 27 -
nC
Gate-Drain Charge Qgd ID=40A (Note1,2) - 47 -
Turn-On Delay Time td(on) - 25 -
VDD= 30.5V
Turn-On Rise Time tr - 25 -
ID=40A
Turn-Off Delay Time td(off) - 66 - ns
RG=25 (Note1,2)
Turn-Off Fall Time tf - 30 -
Note 1) Pulse Test : Pulse width 10 s, Duty Cycle 1%.
Note 2) Essentially Independent of Operating Temperature.
DIODE Electrical Characteristics (Ta=25 Unless otherwise noted)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Diode Forward Voltage VSD ISD=80A, VGS=0V - - 1.5 V
Reverse Recovery Time Trr VGS=0V, IS=80A, dIF/dt=100A/ s - 132 -
Marking
1 KMB
080N75P
A 701 2
1 PRODUCT NAME
2 LOT NO
2007. 10. 31 Revision No : 2 2/6
KMB080N75PA
Fig 1. ID - VDS Fig 2. RDS(ON) - ID
300 10
10V Common Source Common Source
On - Resistance RDS(ON) (m)
TC=25 C TC=25 C
9V Pulse Test Pulse Test
240 9.6
Drain Current ID (A)
7V
180 9.2
VGS = 10V
120 6V 8.8
60 8.4
VGS=5V
0 8.0
0 4 8 12 16 20 0 20 40 60 80 100
Drain - Source Voltage VDS (V) Drain Current ID (A)
Fig 3. ID - VGS Fig 4. RDS(ON) - Tj
300 2.2
VGS = 10V
IDS = 40A
Normalized On Resistance
Drain Current ID (A)
240 1.8
180 1.4
TC=25 C
120 1.0
60 0.6
0 0.2
0 2 4 6 8 10 -50 0 50 100 150
Gate - Source Voltage VGS (V) Junction Temperature Tj ( C)
Fig 5. Vth - Tj Fig 6. IDR - VDSF
1.1
VDS = VGS VGS = 0
Reverse Drain Current IS (A)
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