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SEMICONDUCTOR KMB010P30QA
TECHNICAL DATA P-Ch Trench MOSFET
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly
suitable for Battery pack. H
T
D P G L
FEATURES
VDSS=-30V, ID=-10A. A
DIM MILLIMETERS
Drain-Source ON Resistance. A _
4.85 + 0.2
B1 _
3.94 + 0.2
RDS(ON)=20m (Max.) @ VGS=-10V B2 _
8 5 6.02 + 0.3
RDS(ON)=28m (Max.) @ VGS=-4.5V D _
0.4 + 0.1
B1 B2 G 0.15+0.1/-0.05
Super High Dense Cell Design H _
1.63 + 0.2
1 4 L _
0.65 + 0.2
P 1.27
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) T 0.20+0.1/-0.05
CHARACTERISTIC SYMBOL PATING UNIT
Drain Source Voltage VDSS -30 V
Gate Source Voltage VGSS 20 V
DC ID* -10 A FLP-8
Drain Current
Pulsed IDP -50 A
Drain Source Diode Forward Current IS -1.7 A
Drain Power Dissipation P D* 2.0 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55~150
KMB010P
Thermal Resistance, Junction to Ambient RthJA* 62.5 /W 30QA
Note : *Surface Mounted on FR4 Board 709
PIN CONNECTION (TOP VIEW)
S 1 8 D 1 8
2 7
S 2 7 D
3 6
S 3 6 D
4 5
G 4 5 D
2007. 6. 29 Revision No : 1 1/4
KMB010P30QA
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=-250 A -30 - - V
Drain Cut-off Current IDSS VDS=-24V, VGS=0V - - -1 A
Gate Leakage Current IGSS VGS= 25V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth VDS=VGS, ID=-250 A -1.3 -1.9 -2.5 V
VGS=-10V, ID=-10A - 12 20
Drain-Source ON Resistance RDS(ON)* m
VGS=-4.5V, ID=-8A - 20 28
On-State Drain Current ID(ON)* VDS=-5V, VGS=-10V -30 - - A
Forward Transconductance Gfs* VDS=-15V, ID=-10A - 14 - S
Dynamic
Input Capaclitance Ciss - 2530 -
Ouput Capacitance Coss VDS=-15V, VGS=0V, f=1MHz - 635 - pF
Reverse Transfer Capacitance Crss - 445 -
Total Gate Charge Qg* - 44.6 -
Gate-Source Charge Qgs* VDS=-15V, VGS=-10V, ID=-10A - 7.7 - nC
Gate-Drain Charge Qgd* - 11.5 -
Turn-On Delay Time td(on)* - 10.2 -
Turn-On Rise Time tr* VDD=-15V, VGS=-10V - 6.3 -
ns
Turn-Off Delay Time td(off)* RL=1.25 , RG=6 - 22.5 -
Turn-Off Fall Time tf* - 10.6 -
Source-Drain Diode Ratings
Source-Drain Forward Voltage VSDF* VGS=0V, IDR=-1.7A, - -0.73 -1.2 V
Note
1. Pulse Test : Pulse width 10 , Duty cycle 1%
2007. 6. 29 Revision No : 1 2/4
KMB010P30QA
Fig1. ID - VDS Fig2. ID - VGS
25 25
VGS=10,9,8,7,6,5,4V
20 20
Drain Current ID (A)
Drain Current ID (A)
VGS=3.0V
15 15
10 10
125 C
5 5 25 C
-55 C
0 0
0 2 4 6 8 10 12 0 0.5 1 1.5 2 2.5 3
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
Fig3. C - VDS Fig4. RDS(ON) - Tj
4200 1.8
VGS=-20V
ID=-10A
On-Resistance RDS(ON) (Ohms)
3500 1.6
Ciss
Capacitance (pF)
2800 1.4
2100 1.2
1400 1.0
Coss 0.8
700
Crss
0 0.6
0 5 10 15 20 25 30 -55 -25 0 25 50 75 100 125
Drain-Source Volatage VDS (V) Junction Temperature Tj ( C )
Fig5. Vth - Tj Fig 6. IDR - VSDF
Reverse Source-Drain Current IDR (A)
1.3 20
VGS=VDS
Normalized Gate Source Threshold
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