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SEMICONDUCTOR KMB3D0P30SA
TECHNICAL DATA P-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
E
time, low on resistance, low gate charge and excellent avalanche L B L
characteristics. It is mainly suitable for portable equipment. DIM MILLIMETERS
_
A 2.93 + 0.20
B 1.30+0.20/-0.15
C 1.30 MAX
D
2 3 D 0.40+0.15/-0.05
A
G
FEATURES E 2.40+0.30/-0.20
H
1 G 1.90
VDSS=-30V, ID=-3A H 0.95
J 0.13+0.10/-0.05
Drain-Source ON Resistance K 0.00 ~ 0.10
RDS(ON)=80m (Max.) @ VGS=-10V L 0.55
P P
M 0.20 MIN
RDS(ON)=140m (Max.) @ VGS=-4.5V N 1.00+0.20/-0.10
N
C
P 7
J
Super High Dense Cell Design
M
K
SOT-23
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL P-Ch UNIT
Drain-Source Voltage VDSS -30 V
Gate-Source Voltage VGSS 20 V
DC@TA=25 -3
I D*
Drain Current DC@TA=70 -2.5 A
Pulsed IDP -12
Drain-Source-Diode Forward Current IS -1.25 A
TA=25 1.25
Drain Power Dissipation PD* W
TA=70 0.8
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Ambient RthJA* 100 /W
Note : *Sorface Mounted on FR4 Board
PIN CONNECTION (TOP VIEW)
D 3
3
2 1 2 1
G S
2007. 6. 28 Revision No : 1 1/5
KMB3D0P30SA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS IDS=-250 A, VGS=0V, -30 - - V
VGS=0V, VDS=-24V - - -1
Drain Cut-off Current IDSS A
VGS=0V, VDS=-24V, Tj=55 - - -10
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth VDS=VGS, ID=250 A -1.0 - - V
VGS=-10V, ID=-3A - 64 80
Drain-Source ON Resistance RDS(ON)* m
VGS=-4.5V, ID=-2.5A - 103 140
Forward Transconductance gfs* VDS=-10V, ID=-3A - 4.5 - S
Dynamic
Input Capaclitance Ciss - 565 -
Ouput Capacitance Coss VDS=-15V, VGS= 0V, f=1MHz, - 126 - pF
Reverse Transfer Capacitance Crss - 75 -
Total Gate Charge Qg* - 10 15
Gate-Source Charge Qgs* VDS=-15V, VGS=-10V, ID=-3A - 1.9 - nC
Gate-Drain Charge Qgd* - 2 -
Turn-On Delay Time td(on)* - 10 20
Turn-On Rise Time tr* VDD=-15V, VGS=-10V - 9 20
ns
Turn-Off Delay Time td(off)* ID=-1A, RG=6 - 27 50
Turn-Off Fall Time tf* - 7 16
Source-Drain Diode Ratings
Source-Drain Forward Voltage VSDF* VGS=0V, IDR=-1.25A - - -1.2 V
NOTE 1> * : Pulse Test : Pulse width <300 , Duty cycle < 2%
2007. 6. 28 Revision No : 1 2/5
KMB3D0P30SA
Fig1. ID - VDS Fig2. RDS-ID
Drain Source On Resistance RDS(ON) (m)
12 200
10.0V Common Source
5.0V
Tc=25 C
3.5V
10 Pulse Test
Drain Current ID (A)
4.5V
8 4.0V
VGS=4.5V
6 100
VGS=3.0V
4 VGS=10V
2
0 0
0 2 4 6 8 10 0 4 8 12 16
Drain - Source Voltage VDS (V) Drain - Current ID (A)
Fig3. ID - VGS Fig4. RDS(on) - Tj
12 120
Common Source Common Source
VDS=5V VDS=10V, ID=3A
On-Resistance RDS(ON) (m)
Normalized Drain-Source
Pulse Test 100 Pulse Test
Drain Current ID (A)
8 80
60
4 40
25 C
125 C 20
-55 C
0 0
0 1 2 3 4 5 -75 -50 -25 0 25 50 75 100 125 150
Gate-Source Volatage VGS (V) Junction Temperature Tj ( C )
Fig5. Vth - Tj Fig6. IDR - VSDF
Reverse Source-Drain Current IDR (A)
5 Common Source 10
Common Source
Gate Threshold Voltage Vth (V)
VGS=VDS Tc= 25 C
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