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SEMICONDUCTOR KMB3D9N40TA
TECHNICAL DATA N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche E
characteristics. It is mainly suitable for Load switch and Back-Light K B
Inverter. DIM MILLIMETERS
A _
2.9 + 0.2
B 1.6+0.2/-0.1
C _
0.70 + 0.05
2
G
3 _
D 0.4 + 0.1
FEATURES
D
A
F
E 2.8+0.2/-0.3
F _
1.9 + 0.2
G
1
VDSS=40V, ID=3.9A G 0.95
_
Drain-Source ON Resistance H 0.16 + 0.05
I 0.00-0.10
RDS(ON)=45m (Max.) @ VGS=10V J 0.25+0.25/-0.15
K 0.60
RDS(ON)=58m (Max.) @ VGS=4.5V
C
L
L 0.55
Super High Dense Cell Design I
H
J J
TSM
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL N-Ch UNIT
Marking
Drain-Source Voltage VDSS 40 V Lot No.
Gate-Source Voltage VGSS 20 V
DC@Ta=25
ID
3.9
Type Name
A2
Drain Current DC@Ta=70 3.1 A
Pulsed IDP 16
Drain-Source-Diode Forward Current IS 0.8 A
Ta=25 1.25
Drain Power Dissipation PD W
Ta=70 0.8
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Ambient RthJA 100 /W
Note > *Surface Mounted on 1 1 FR4 Board, t 5sec
PIN CONNECTION (TOP VIEW)
D 3
3
2 1 2 1
G S
2008. 6. 10 Revision No : 0 1/5
KMB3D9N40TA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=250 A 40 - - V
VGS=0V, VDS=32V - - 0.5
Drain Cut-off Current IDSS A
VGS=0V, VDS=32V, Tj=55 - - 10
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth* VDS=VGS, ID=250 A 1.0 - 3.0 V
VGS=10V, ID=3.9A - 29 45
Drain-Source ON Resistance RDS(ON)* m
VGS=4.5V, ID=3.5A - 42 58
Forward Transconductance gfs* VDS=10V, ID=3.9A - 11 - S
Dynamic
Input Capaclitance Ciss - 446 -
Ouput Capacitance Coss VDS=20V, f=1MHz, VGS=0V - 78 - pF
Reverse Transfer Capacitance Crss - 40 -
Total Gate Charge Qg* - 9.3 -
Gate-Source Charge Qgs* VDS=20V, VGS=10V, ID=3.9A - 1.8 - nC
Gate-Drain Charge Qgd* - 2.0 -
Turn-On Delay Time td(on)* - 10.3 -
Turn-On Rise Time tr* VDD=20V, VGS=10V - 5.4 -
ns
Turn-Off Delay Time td(off)* ID=1A, RG=6 - 28.2 -
Turn-Off Fall Time tf* - 4.0 -
Source-Drain Diode Ratings
Source-Drain Forward Voltage VSDF* VGS=0V, IS=1A - 0.8 1.2 V
Note > *Pulse Test : Pulse width <300 , Duty cycle < 2%
2008. 6. 10 Revision No : 0 2/5
KMB3D9N40TA
2008. 6. 10 Revision No : 0 3/5
KMB3D9N40TA
2008. 6. 10 Revision No : 0 4/5
KMB3D9N40TA
2008. 6. 10 Revision No : 0 5/5
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