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SEMICONDUCTOR KMB4D5NP55Q
TECHNICAL DATA N and P-Ch Trench MOSFET
General Description
Switching regulator and DC-DC Converter applications.
It s mainly suitable for power management in PC,
portable equipment and battery powered systems.
H
T
D P G L
FEATURES
N-Channel
A
: VDSS=55V, ID=4.5A.
: RDS(ON)=60m (Max.) @ VGS=10V DIM MILLIMETERS
A 5.05+0.25/-0.20
: RDS(ON)=95m (Max.) @ VGS=4.5V B1 _
3.90 + 0.3
8 5 B2 _
6.00 + 0.4
Low Drain-Source ON Resistance.
D _
0.42 + 0.1
: VDSS=-55V, ID=-3A. B1 B2 G _
0.15 + 0.1
: RDS(ON)=110m (Max.) @ VGS=-10V H _
1.4 + 0.2
1 4 L _
0.5 + 0.2
: RDS(ON)=145m (Max.) @ VGS=-4.5V P 1.27 Typ.
Super High Dense Cell Design. T _
0.20 + 0.05
Reliable and rugged.
FLP-8 (1)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL N-Ch P-Ch UNIT
Drain-Source Voltage VDSS 55 -55 V
Gate-Source Voltage VGSS 20 20 V
DC ID * 4.5 -3
Drain Current A
Pulsed (Note1)
IDP * 20 -15
Source-Drain Diode Current IS 1.7 -1.7 A
Drain Power Dissipation PD * 2 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Ambient RthJA* 62.5 /W
* : Surface Mounted on FR4 Board, t 10sec.
PIN CONNECTION (TOP VIEW)
D1 D1 S2
S1 1 8 D1
G1 2 7 D1 G1
G1
S2 3 6 D2
G2 4 5 D2
S1 D2 D2
N-Channel MOSFET P-Channel MOSFET
2007. 3. 22 Revision No : 2 1/8
KMB4D5NP55Q
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
ID=250 A, VGS=0V N-Ch 55 - -
Drain-Source Breakdown Voltage BVDSS V
ID=-250 A, VGS=0V P-Ch -55 - -
VDS=44V, VGS=0V N-Ch - - 1
Drain Cut-off Current IDSS A
VDS=-44V, VGS=0V P-Ch - - -1
N-Ch - - 100
Gate Leakage Current IGSS VGS= 20V, VDS=0V nA
P-Ch - - 100
VDS=VGS, ID=250 A N-Ch 1.0 2.0 3.0
Gate Threshold Voltage Vth V
VDS=VGS, ID=-250 A P-Ch -1.0 -1.6 -2.5
VGS=10V, ID=4.5A (Note 1) N-Ch - 40 60
VGS=-10V, ID=-3A (Note 1) P-Ch - 85 110
Drain-Source ON Resistance RDS(ON) m
VGS=4.5V, ID=4A (Note 1) N-Ch - 75 95
VGS=4.5V, ID=-2A (Note 1) P-Ch - 110 145
VGS=10V, VDS=5V (Note 1) N-Ch 15 - -
ON State Drain Current ID(ON) A
VGS=-10V, VDS=-5V (Note 1) P-Ch -10 - -
VDS=5V, ID=4.5A (Note 1) N-Ch - 9 -
Forward Transconductance gfs S
VDS=-5V, ID=-3A (Note 1) P-Ch - 7.8 -
IS=1.7A, VGS=0V (Note 1) N-Ch - 0.8 1.2
Source-Drain Diode Forward Voltage VSD V
IS=-1.7A, VGS=0V (Note 1) P-Ch - -0.79 -1.2
Dynamic (Note 2)
VDS=30V, ID=4.5A, VGS=10V (Fig.1) N-Ch - 11.9 14
VDS=-30V, ID=-3A, VGS=-10V (Fig.3) P-Ch - 15.5 17.8
Total Gate Charge Qg
VDS=30V, ID=4.5A, VGS=4.5V (Fig.1) N-Ch - 6.1 7.1
VDS=-30V, ID=-3A, VGS=-4.5V (Fig.3) P-Ch - 7.1 8.2
N-Ch N-Ch - 1.8 2.2 nC
Gate-Source Charge Qgs : VDS=30V, ID=4.5A,
VGS=4.5V (Fig.1) P-Ch - 2.4 2.8
P-Ch N-Ch - 2.8 3.3
Gate-Drain Charge Qgd : VDS=-30V, ID=-3A,
VGS=-4.5V (Fig.3) P-Ch - 3.2 3.8
N-Ch - 5.5 6.5
Turn-on Delay time td(on)
P-Ch - 6.5 7.7
N-Ch
: VDD=30V, ID=1A, N-Ch - 9.4 13
Turn-on Rise time tr
VGS=10V, RG=6 (Fig.2) P-Ch - 14.3 17
ns
N-Ch N-Ch - 11.7 13.8
Turn-off Delay time td(off) : VDD=-30V, RL=15 , P-Ch - 43.2 51
VGS=-10V, RG=6 (Fig.4)
N-Ch - 4.4 5.1
Turn-off Fall time tf
P-Ch - 17.7 21
N-Ch - 510 590
Input Capacitance Ciss
N-Ch P-Ch - 830 960
: VDS=25V, VGS=0V, f=1.0MHz N-Ch - 67 78
Output Capacitance Coss pF
P-Ch P-Ch - 75 87
: VDS=-30V, VGS=0V, f=1.0MHz N-Ch - 40 50
Reverse transfer Capacitance Crss
P-Ch - 45 52
Note 1) Pulse test : Pulse width 300 , Duty Cycle 2%.
Note 2) Guaranteed by design. Not subject to production testing.
2007. 3. 22 Revision No : 2 2/8
KMB4D5NP55Q
N-Channel
ID - VDS ID - VGS
20 25
VGS=10V
VGS=8V VGS= 5V
16 VGS=6V 20
Drain Current ID (A)
Drain Current ID (A)
12 VGS=4.5V 15
8 10
125 C
VGS=4V
25 C -55 C
4 5
VGS=3V
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 0 1.0 2.0 3.0 4.0 5.0 6.0
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
IS - VSD
Vth - Tj
40
Normalized Threshold Voltage Vth
1.6
Reverse Drain Current IS (A)
VDS = VGS
IDS = 250◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo