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SEMICONDUCTOR KMB4D5DN60QA
TECHNICAL DATA Dual N-Ch Trench MOSFET
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low
on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly
suitable for load switch and Back light inverter. H
T
D P G L
FEATURES
VDSS=60V, ID=4.5A. A
DIM MILLIMETERS
Drain-Source ON Resistance. A _
4.85 + 0.2
B1 _
3.94 + 0.2
RDS(ON)=56m (Max.) @ VGS=10V B2 _
8 5 6.02 + 0.3
RDS(ON)=77m (Max.) @ VGS=4.5V D _
0.4 + 0.1
B1 B2 G 0.15+0.1/-0.05
H _
1.63 + 0.2
1 4 L _
0.65 + 0.2
P 1.27
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) T 0.20+0.1/-0.05
CHARACTERISTIC SYMBOL PATING UNIT
Drain Source Voltage VDSS 60 V
Gate Source Voltage VGSS 20 V
DC@Ta=25 I D* 4.5 A FLP-8
Drain Current
Pulsed IDP 20 A
Drain Source Diode Forward Current IS 3 A
Drain Power Dissipation @Ta=25 PD* 2 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55~150
KMB4D5DN
Thermal Resistance, Junction to Ambient RthJA* 62.5 /W 60QA
Note> *Surface Mounted on 1" 1" FR4 Board, t 10sec.
PIN CONNECTION (TOP VIEW)
S1 1 8 D1 1 8
G1 2 7 D1 2 7
S2 3 6 D2 3 6
G2 4 5 D2 4 5
2008. 5. 27 Revision No : 0 1/4
KMB4D5DN60QA
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=250 A 60 - - V
Drain Cut-off Current IDSS VGS=0V, VDS=48V - - 1 A
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1.0 - 3.0 V
VGS=10V, ID=4.5A - 46 56
Drain-Source ON Resistance RDS(ON)* m
VGS=4.5V, ID=3A - 64 77
Forward Transconductance gfs* VDS=5V, ID=4.5A - 11 - S
Dynamic
Input Capaclitance Ciss* - 490 -
Ouput Capacitance Coss* VDS=30V, VGS=0V, f=1MHz - 45 - pF
Reverse Transfer Capacitance Crss* - 25 -
VGS=10V - 10.4 -
Total Gate Charge Qg*
VGS=4.5V - 5.1 -
VDS=30V, VGS=10V, ID=4.5A nC
Gate-Source Charge Qgs* - 2.3 -
Gate-Drain Charge Qgd* - 2.2 -
Turn-On Delay Time td(on)* - 12.4 -
Turn-On Rise Time tr* VDS=30V, VGS=10V - 34.5 -
ns
Turn-Off Delay Time td(off)* ID=4.5 , RG=3 - 30.7 -
Turn-Off Fall Time tf* - 5.0 -
Source-Drain Diode Ratings
Source-Drain Forward Voltage VSDF* VGS=0V, IS=1A - 0.7 1.0 V
Note> *Pulse Test : Pulse Width 300 , Duty Cycle 2%
2008. 5. 27 Revision No : 0 2/4
KMB4D5DN60QA
Fig1. ID - VDS Fig2. RDS(ON) - ID
20 100
VGS=10V Ta=25 C
On-Resistance RDS(ON) (m)
VGS=4.5V 90
Drain Current ID (A)
15 80
VGS=4.5V
VGS=5.0V 70
VGS=4.0V
10 60
50
VGS=10V
5 VGS=3.5V 40
30
0 20
0 1 2 3 4 5 0 5 10 15 20
Drain - Source Voltage VDS (V) Drain Current ID (A)
Fig3. ID - VGS Fig4. RDS(on) - Tj
Drain-SourceOn-Resistance RDS(ON) (m)
20 150
VDS=5V
VGS=10V, ID=4.5A
120
Drain Current ID (A)
15
90
10
60
5
125 C 25 C 30
0 0
0 1 2 3 4 5 -75 -50 -25 0 25 50 75 100 125 150
Gate Source Voltage VGS (V) Junction Temperature Tj ( C )
Fig5. Vth - Tj Fig 6. IS - VSDF
5 100
Gate Threshold Voltage Vth (V)
VGS=VDS
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