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SEMICONDUCTOR KMB5D0NP40Q
TECHNICAL DATA N and P-Ch Trench MOSFET
General Description
Switching regulator and DC-DC Converter applications.
It s mainly suitable for power management in PC,
portable equipment and battery powered systems. H
T
D P G L
FEATURES
N-Channel A
DIM MILLIMETERS
: VDSS=40V, ID=5A. A 5.05+0.25/-0.20
B1 _
3.90 + 0.3
: RDS(ON)=35m (Max.) @ VGS=10V B2 _
8 5 6.00 + 0.4
: RDS(ON)=62m (Max.) @ VGS=4.5V D _
0.42 + 0.1
B1 B2 G _
0.15 + 0.1
P-Channel H _
1.4 + 0.2
: VDSS=-40V, ID=-4A. 1 4 L _
0.5 + 0.2
P 1.27 Typ
: RDS(ON)=47m (Max.) @ VGS=-10V _
0.20 + 0.05
T
: RDS(ON)=65m (Max.) @ VGS=-4.5V
Super High Dense Cell Design.
Reliable and rugged.
FLP-8
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL N-Ch P-Ch UNIT
Drain-Source Voltage VDSS 40 -40 V
Gate-Source Voltage VGSS 20 20 V
DC ID * 5 -4
Drain Current A
Pulsed (Note1) IDP* 20 -16
Source-Drain Diode Current IS* 1.7 -1.7 A
Drain Power Dissipation PD * 2 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Ambient RthJA 62.5 /W
* : Surface Mounted on FR4 Board, t 10sec.
PIN CONNECTION (TOP VIEW) D1 D1 S2
S1 1 8 D1
G1 2 7 D1 G2
G1
S2 3 6 D2
G2 4 5 D2
S1 D2 D2
N-Channel MOSFET P-Channel MOSFET
2007. 3. 22 Revision No : 1 1/9
KMB5D0NP40Q
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
ID=250 A, VGS=0V N-Ch 40 - -
Drain-Source Breakdown Voltage BVDSS V
ID=-250 A, VGS=0V P-Ch -40 - -
VDS=32V, VGS=0V N-Ch - - 1
Drain Cut-off Current IDSS A
VDS=-32V, VGS=0V P-Ch - - -1
N-Ch - - 100
Gate Leakage Current IGSS VGS= 20V, VDS=0V nA
P-Ch - - 100
VDS=VGS, ID=250 A N-Ch 1.0 2.0 3.0
Gate Threshold Voltage Vth V
VDS=VGS, ID=-250 A P-Ch -0.8 -1.5 -2.0
VGS=10V, ID=5.0A (Note 1) N-Ch - 25 35
VGS=-10V, ID=-4A (Note 1) P-Ch - 37 47
Drain-Source ON Resistance RDS(ON) m
VGS=4.5V, ID=4A (Note 1) N-Ch - 45 62
VGS=-4.5V, ID=-3A (Note 1) P-Ch - 50 65
VGS=10V, VDS=5V N-Ch 15 - -
ON State Drain Current ID(ON) A
VGS=-10V, VDS=-5V P-Ch -20 - -
VDS=5V, ID=5A (Note 1) N-Ch - 8.5 -
Forward Transconductance gfs S
VDS=-5V, ID=-4A (Note 1) P-Ch - 9.5 -
IS=1.7A, VGS=0V (Note 1) N-Ch - 0.8 1.2
Source-Drain Diode Forward Voltage VSD V
IS=-1.7A, VGS=0V (Note 1) P-Ch - -0.77 -1.2
2007. 3. 22 Revision No : 1 2/9
KMB5D0NP40Q
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Dynamic (Note 2)
N-Ch
: VDS=24V, ID=5A, N-Ch - 15.8 18
VGS=10V (Fig.1)
P-Ch
: VDS=-24V, ID=-4A, P-Ch - 19.9 23
VGS=-10V (Fig.3)
Total Gate Charge Qg
N-Ch
: VDS=24V, ID=5A, N-Ch - 7.7 9
VGS=4.5V (Fig.1)
nC
P-Ch
: VDS=-24V, ID=-4A, P-Ch - 9.8 11
VGS=-4.5V (Fig.3)
N-Ch N-Ch - 3 3.6
Gate-Source Charge Qgs : VDS=24V, ID=5A,
VGS=4.5V (Fig.1) P-Ch - 2.8 3.2
P-Ch N-Ch - 3.9 4.6
Gate-Drain Charge Qgd : VDS=-24V, ID=-4A,
VGS=-4.5V (Fig.3) P-Ch - 4.2 4.9
N-Ch - 6.8 8
Turn-on Delay time td(on)
P-Ch - 8.7 10
N-Ch N-Ch - 8.4 9
Turn-on Rise time tr : VDD=15V, ID=3A,
VGS=10V, RG=4.7 (Fig.2) P-Ch - 19.8 23
P-Ch ns
N-Ch - 16.6 18
Turn-off Delay time td(off) : VDD=-15V, VGS=-10V,
RG=4.7 , ID=-2.2A (Fig.4) P-Ch - 63.7 75
N-Ch - 10.5 11
Turn-off Fall time tf
P-Ch - 26 30
N-Ch - 800 895
Input Capacitance Ciss
P-Ch - 1090 1297
N-Ch
: VDS=10V, VGS=0V, f=1.0MHz N-Ch - 150 168
Output Capacitance Coss pF
P-Ch P-Ch - 205 240
: VDS=-10V, VGS=0V, f=1.0MHz
N-Ch - 98 110
Reverse transfer Capacitance Crss
P-Ch - 125 145
Note 1) Pulse test : Pulse width 300 , Duty Cycle 2%.
Note 2) Guaranteed by design. Not subject to production testing.
2007. 3. 22 Revision No : 1 3/9
KMB5D0NP40Q
N-Channel
ID - VDS ID - VGS
20 25
VGS = 10, 6, 5V
Drain Current ID (A)
16 VGS= 4.5V
Drain Current ID (A)
20
12 15
8 VGS= 4V 10 Tj = 25 C
Tj = -55 C
Tj = 125 C
4 5
VGS= 3V
0 0
0 0.5 1 1.5 2 2.5 3 0 0.9 1.8 2.7 3.6 4.5 5.4
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
Vth - Tj IS - VSD
Normalized Threshold Voltage Vth (V)
1.6 20
VDS = VGS
Reverse Drain Current IS (A)
IDS = 250◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo