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SEMICONDUCTOR KMB6D0NP40QA
TECHNICAL DATA N and P-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
H
characteristics. It is mainly suitable for Back-light Inverter.
T
D P G L
FEATURES
N-Channel
A
: VDSS=40V, ID=6A.
DIM MILLIMETERS
: RDS(ON)=31m (Max.) @ VGS=10V A _
4.85 + 0.2
B1 _
3.94 + 0.2
: RDS(ON)=45m (Max.) @ VGS=4.5V 8 5
B2 _
6.02 + 0.3
P-Channel D _
0.4 + 0.1
B1 B2 G 0.15+0.1/-0.05
: VDSS=-40V, ID=-5A.
1 H _
1.63 + 0.2
4
: RDS(ON)=45m (Max.) @ VGS=-10V L _
0.65 + 0.2
P 1.27
: RDS(ON)=63m (Max.) @ VGS=-4.5V
T 0.20+0.1/-0.05
Super High Dense Cell Design.
MAXIMUM RATING (Ta=25 ) FLP-8
CHARACTERISTIC SYMBOL N-Ch P-Ch UNIT
Drain-Source Voltage VDSS 40 -40 V
Gate-Source Voltage VGSS 20 20 V Marking
DC I D* 6 -5
Drain Current A Type Name
Pulsed IDP* 20 -20
Source-Drain Diode Current IS* 3.0 -3.2 A
KMB6D0NP
TA=25 2 2 40QA
Drain Power Dissipation PD* W
TA=70 1.3 1.3
Lot No.
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Ambient RthJA* 62.5 /W
* : Surface Mounted on FR4 Board.
PIN CONNECTION (TOP VIEW)
S1 1 8 D1 1 8
G1 2 7 D1 2 7
S2 3 6
3 6 D2
G2 4 5 D2 4 5
2008. 8. 12 Revision No : 0 1/8
KMB6D0NP40QA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
ID=250 A, VGS=0V N-Ch 40 - -
Drain-Source Breakdown Voltage BVDSS V
ID=-250 A, VGS=0V P-Ch -40 - -
VDS=32V, VGS=0V N-Ch - - 1
Drain Cut-off Current IDSS A
VDS=-32V, VGS=0V P-Ch - - -1
N-Ch - - 100
Gate Leakage Current IGSS VGS= 20V, VDS=0V nA
P-Ch - - 100
VDS=VGS, ID=250 A N-Ch 1.0 2.3 3.0
Gate Threshold Voltage Vth V
VDS=VGS, ID=-250 A P-Ch -1.0 -2.0 -3.0
VGS=10V, ID=6A N-Ch - 19.6 31.0
VGS=-10V, ID=-5A P-Ch - 31.2 45.0
Drain-Source ON Resistance RDS(ON)* m
VGS=4.5V, ID=5A N-Ch - 39.9 45.0
VGS=-4.5V, ID=-2A P-Ch - 47.6 63.0
VDS=5V, ID=6A N-Ch - 2.2 -
Forward Transconductance gfs* S
VDS=-5V, ID=-4A P-Ch - 9.5 -
Dynamic
N-Ch - 420 -
Input Capacitance Ciss
P-Ch - 850 -
N-Ch
: VDS=20V, VGS=0V, f=1MHz N-Ch - 160 -
Output Capacitance Coss pF
P-Ch P-Ch - 220 -
: VDS=-20V, VGS=0V, f=1MHz
N-Ch - 40 -
Reverse transfer Capacitance Crss
P-Ch - 82 -
N-Ch
N-Ch - 12.0 -
: VDS=20V, ID=6A, VGS=10V
Total Gate Charge Qg*
P-Ch
: VDS=-20V, ID=-5A, VGS=-10V P-Ch - 15.0 -
N-Ch N-Ch - 1.6 - nC
Gate-Source Charge Qgs* : VDS=20V, ID=6A,
VGS=10V P-Ch - 2.0 -
P-Ch N-Ch - 2.6 -
Gate-Drain Charge Qgd* : VDS=-20V, ID=-5A,
VGS=-4.5V P-Ch - 6.5 -
N-Ch - 9.0 -
Turn-on Delay time td(on)*
P-Ch - 17.0 -
N-Ch
: VDD=20V, ID=6A, N-Ch - 8.9 -
Turn-on Rise time tr*
VGS=10V, RG=3 P-Ch - 13.2 -
P-Ch ns
N-Ch - 23.6 -
Turn-off Delay time td(off)* : VDD=-20V, VGS=-10V,
P-Ch - 38.0 -
RG=3 , ID=-5A
N-Ch - 3.4 -
Turn-off Fall time tf*
P-Ch - 15.0 -
Source-Drain Diode Ratings
IS=1.0A, VGS=0V N-Ch - 0.71 1.2
Source-Drain Diode Forward Voltage VSDF* V
IS=-1.0A, VGS=0V P-Ch - -0.71 -1.2
Note>* Pulse Test : Pulse width <300 , Duty cycle < 2%
2008. 8. 12 Revision No : 0 2/8
KMB6D0NP40QA
2008. 8. 12 Revision No : 0 3/8
KMB6D0NP40QA
2008. 8. 12 Revision No : 0 4/8
KMB6D0NP40QA
Fig11. Gate Charge Circuit and Wave Form
VGS
10 V
Schottky
ID Diode
0.5 VDSS
ID
2.0 mA
VDS Q
Qgs Qgd
VGS Qg
Fig12. Resistive Load Switching
VDS
RL 90%
0.5 VDSS
3
VDS 10%
VGS
10 V td(on) td(off)
VGS tr tf
ton toff
2008. 8. 12 Revision No : 0 5/8
KMB6D0NP40QA
2008. 8. 12 Revision No : 0 6/8
KMB6D0NP40QA
2008. 8. 12 Revision No : 0 7/8
KMB6D0NP40QA
Fig. 11 Gate Charge
VGS
-4.5 V
Schottky
ID Diode
0.5 VDSS
ID
2.0 mA
VDS Q
Qgs Qgd
VGS Qg
Fig. 12 Resistive Load Switching
ton toff
RL td(on) td(off)
tr tf
0.5 VDSS VGS
10%
3
VDS
-10 V VGS
VDS 90%
2008. 8. 12 Revision No : 0 8/8
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