Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors KEC kmb6d0ns30qa
<< Back | HomeMost service manuals and schematics are PDF files, so You will need Adobre Acrobat Reader to view : Acrobat Download Some of the files are DjVu format. Readers and resources available here : DjVu Resources
For the compressed files, most common are zip and rar. Please, extract files with Your favorite compression software ( WinZip, WinRAR ... ) before viewing. If a document has multiple parts, You should download all, before extracting.
Good luck. Repair on Your own risk. Make sure You know what You are doing.
Image preview - the first page of the document
>> Download kmb6d0ns30qa documenatation <<
Text preview - extract from the document
SEMICONDUCTOR KMB6D0NS30QA
TECHNICAL DATA N-Ch MOSFET+SBD
GENERAL DESCRIPTION
This trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
H
characteristics. The MOSFET and Schottky diode are isolated inside the
T
package. It is mainly suitable for portable equipment and SMPS. D P G L
U
A
FEATURES
DIM MILLIMETERS
VDSS=30V, ID=6A. A _
4.85 + 0.2
B1 _
3.94 + 0.2
Drain-Source ON Resistance. 8 5
B2 _
6.02 + 0.3
RDS(ON)=28m (Max.) @VGS=10V D _
0.4 + 0.1
B1 B2 G 0.15+0.1/-0.05
RDS(ON)=42m (Max.) @VGS=4.5V
1 H _
1.63 + 0.2
4
Super High Dense Cell Design L _
0.65 + 0.2
P 1.27
High Power and Current Handing Capability
T 0.20+0.1/-0.05
U 0.1 MAX
MAXIMUM RATING (Ta=25 Unless otherwise noted)
FLP-8
CHARACTERISTIC SYMBOL RATING UNIT
Drain Source Voltage VDSS 30 V
Gate Source Voltage VGSS 20 V
DC ID 6 A
Drain Current
Pulsed IDP 20 A
Drain Source Diode Forward Current IS 1.3 A
KMB6D0NS
TA=25 1.1 W 30QA
Drain Power Dissipation PD
705
TA=70 0.7 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -50~150
Thermal Resistance, Junction to Ambient RthJA 78 /W
Note 1 : Surface Mounted on FR4 Board, t 10sec.
SCHOTTKY DIODE MAXIMUM RATINGS (Ta=25 Unless otherwise noted)
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage VRRM 30 V
Average Forward Current IF 2 A
PIN CONNECTION (TOP VIEW)
A 1 8 C 1 5
A 2 7 C 2 6
3 7
S 3 6 D
G 4 5 D 4 8
2007. 5. 25 Revision No : 1 1/5
KMB6D0NS30QA
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED
MOSFET ELECTRICAL CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 30 - - V
Drain Cut-off Current IDSS VDS=24V, VGS=0V - - 1 A
Gate Leakage Current IGSS VGS= 25V, VDS=0V - - 100 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1 2 3 V
VGS=10.0V, ID=6A - 24 28
Drain-Source ON Resistance RDS(ON)* m
VGS=4.5V, ID=4.9A - 35 42
On-State Drain Current ID(ON)* VDS=5V, VGS=10A 20 - - A
Forward Transconductance Gfs* VDS=10V, ID=6A - 20 - S
Dynamic
Input Capaclitance Ciss - 740 -
Ouput Capacitance Coss VDS=15V, f=1MHz, VGS=OV - 170 - pF
Reverse Transfer Capacitance Crss - 75 -
Total Gate Charge Qg* - 7 10
Gate-Source Charge Qgs* VDS=10V, VGS=5V, ID=6A - 3.8 - nC
Gate-Drain Charge Qgd* - 2.5 -
Turn-On Delat Time td(on)* - 8 16
Turn-On Rise Time tr* VDD=15V, VGS=10V - 13 24
ns
Turn-On Deley Time td(off)* ID=1A, RG=6 (Note 1) - 18 29
Turn-On Fall Time tf* - 8 6
Source-Drain Diode Ratings
Source-Drain Forward Voltage VSDF IDR=1.7A, VGS=0V - 0.75 1.2 V
Note
* Pulse Test : Pulse width 10 , Duty cycle 1%
SHOTTKY DIODE ELECTRICAL CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Breakdown Voltage BV IR=1mA 30 - - V
Reverse Leakage Current IR VR=30V - - 0.5 mA
IF=0.1A - - 280
Forward Voltage VF IF=3A - - 420 mV
IF=6A - - 500
2007. 5. 25 Revision No : 1 2/5
KMB6D0NS30QA
Fig1. VDS - ID Fig2. RDS(ON) - ID
Drain Source On Resistance RDS(ON) ()
20 200
10V 5.0V 4.5V Common Source
Tc= 25 C
Pulse Test
Drain Current ID (A)
16
4.0V
12
100
8 VGS=4.5V
3.5V
4
VGS=10V
VGS=3.0V
0 0
0 2 4 6 8 10 0 4 8 12 16 20
Drain - Source Voltage VDS (V) Drain Current ID (A)
Fig3. VGS - ID Fig4. RDS(ON) - Tj
20 80
Common Source Common Source
On-Resistance RDS(ON) (m)
VDS=5V VGS=10V
Normalized Drain-Source
Pulse Test Pulse Test
16
Drain Current ID (A)
60
12
40
8
25 C
20
4
125 C
-55 C
0 0
0 1 2 3 4 5 -75 -50 -25 0 25 50 75 100 125 150
Gate - Source Voltage VGS (V) Junction Temperature Tj ( C )
Fig5. Vth - Tj Fig6. IS - VSDF
5 Common Source 10
Gate Threshold Voltage Vth (V)
Common Source
VGS=VDS Tc= 25 C
ID=250◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo