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SEMICONDUCTOR KMB6D0DN30QA
TECHNICAL DATA Dual N-Ch Trench MOSFET
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment and DC-DC H
T
Converter Applications. D P G L
FEATURES
VDSS=30V, ID=6A. A
DIM MILLIMETERS
Drain-Source ON Resistance. A _
4.85 + 0.2
B1 _
3.94 + 0.2
RDS(ON)=28m (Max.) @VGS=10V B2 _
8 5 6.02 + 0.3
RDS(ON)=42m (Max.) @VGS=4.5V D _
0.4 + 0.1
B1 B2 G 0.15+0.1/-0.05
Super High Dense Cell Design H _
1.63 + 0.2
High Power and Current Handing Capability 1 4 L _
0.65 + 0.2
P 1.27
T 0.20+0.1/-0.05
MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC SYMBOL PATING UNIT
Drain Source Voltage VDSS 30 V
FLP-8
Gate Source Voltage VGSS 20 V
DC ID * 6 A
Drain Current
Pulsed IDP 30 A
Drain Source Diode Forward Current IS 1.7 A
Drain Power Dissipation 25 PD * 2 W
Maximum Junction Temperature Tj 150 KMB6D0DN
Storage Temperature Range Tstg -50~150 30QA
Thermal Resistance, Junction to Ambient RthJA* 62.5 /W
Note> *Surface Mounted on FR4 Board, t 10sec.
PIN CONNECTION (TOP VIEW)
S1 1 8 D1 1 8
G1 2 7 D1 2 7
S2 3 6 D2 3 6
G2 4 5 D2 4 5
2008. 3. 21 Revision No : 1 1/5
KMB6D0DN30QA
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 30 - - V
Drain Cut-off Current IDSS VDS=24V, VGS=0V - - 1 A
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1.0 1.7 2.5 V
VGS=10V, ID=6A - 24 28
Drain-Source ON Resistance RDS(ON)* m
VGS=4.5V, ID=5A - 35 42
On-State Drain Current ID(ON)* VDS=5V, VGS=10V 20 - - A
Forward Transconductance gfs* VDS=5V, ID=6A - 20 - S
Dynamic
Input Capacitance Ciss - 576 -
Ouput Capacitance Coss VDS=15V, f=1MHz, VGS=0V - 111 - pF
Reverse Transfer Capacitance Crss - 75 -
Total Gate Charge Qg* - 12.5 -
Gate-Source Charge Qgs* VDS=15V, VGS=10V, ID=2A - 2.0 - nC
Gate-Drain Charge Qgd* - 2.8 -
Turn-On Delay Time td(on)* - 7.8 -
Turn-On Rise Time tr* VDD=15V, VGS=10V - 11.6 -
ns
Turn-Off Delay Time td(off)* ID=1A, RG=6 - 15.3 -
Turn-Off Fall Time tf* - 16 -
Source-Drain Diode Ratings
Source-Drain Forward Voltage VSDF* IDR=1.7A, VGS=0V - 0.75 1.2 V
Note> * Pulse Test : Pulse width 300 , Duty cycle 2%
2008. 3. 21 Revision No : 1 2/5
KMB6D0DN30QA
Fig1. ID - VDS Fig2. RDS(on) - ID
Drain Source On Resistance RDS(ON) ()
10 0.16
Common Source
0.14 Ta= 25 C
Pulse Test
8
Drain Current ID (A)
VGS=10, 9, 8, 7, 6, 5, 4V 0.12
6 0.1
VGS=2.5V
0.08
VGS=4.5
4 0.06
0.04
2
VGS=1.5V 0.02 VGS=10.0
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20
Drain - Source Voltage VDS (V)
Drain Current ID (A)
Fig3. ID - VGS Fig4. RDS(ON) - Tj
25 1.6
Normalized On Resistance RDS(ON)
VGS = 10V
ID= 6A
125 C 25 C 1.4
20
Drain Current ID (A)
-55 C 1.2
15
1.0
10
0.8
5
0.6
0 0
0 1.0 2.0 3.0 4.0 5.0 6.0 -75 -50 -25 0 25 50 75 100 125 150
Gate - Source Voltage VGS (V) Junction Temperature Tj ( C )
Fig5. Vth - Tj Fig6. IS - VSDF
1.6 40
Normalized Threshold Voltage Vth
VDS = VGS
Reverse Drain Current IDR (A)
ID = 250◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo