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SEMICONDUCTOR KMB6D0DN30QB
TECHNICAL DATA Dual N-Ch Trench MOSFET
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
H
characteristics. It is mainly suitable for portable equipment and DC-DC
T
Converter Applications. D P G L
U
FEATURES
A
VDSS=30V, ID=6A.
DIM MILLIMETERS
Drain-Source ON Resistance. A _
4.85 + 0.2
B1 _
3.94 + 0.2
RDS(ON)=28m (Max.) @VGS=10V 8 5
B2 _
6.02 + 0.3
RDS(ON)=42m (Max.) @VGS=4.5V D _
0.4 + 0.1
B1 B2 G 0.15+0.1/-0.05
Super High Dense Cell Design
1 H _
1.63 + 0.2
4
High Power and Current Handing Capability L _
0.65 + 0.2
P 1.27
T 0.20+0.1/-0.05
U 0.1 MAX
MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC SYMBOL PATING UNIT
Drain Source Voltage VDSS 30 V
FLP-8
Gate Source Voltage VGSS 20 V
DC ID * 6 A
Drain Current
Pulsed IDP 30 A
Drain Source Diode Forward Current IS 1.7 A
Drain Power Dissipation 25 PD * 2 W
Maximum Junction Temperature Tj 150
KMB6D0DN
Storage Temperature Range Tstg -50~150 30QB
Thermal Resistance, Junction to Ambient RthJA* 62.5 /W
Note> *Surface Mounted on FR4 Board, t 10sec.
PIN CONNECTION (TOP VIEW)
S1 1 8 D1 1 8
G1 2 7 D1 2 7
S2 3 6 D2 3 6
G2 4 5 D2 4 5
2011. 8. 30 Revision No : 0 1/5
KMB6D0DN30QB
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 30 - - V
Drain Cut-off Current IDSS VDS=24V, VGS=0V - - 1 A
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1.0 1.7 2.5 V
VGS=10V, ID=6A - 24 28
Drain-Source ON Resistance RDS(ON)* m
VGS=4.5V, ID=5A - 35 42
On-State Drain Current ID(ON)* VDS=5V, VGS=10V 20 - - A
Forward Transconductance gfs* VDS=5V, ID=6A - 20 - S
Dynamic
Input Capacitance Ciss - 742 -
Ouput Capacitance Coss VDS=15V, f=1MHz, VGS=0V - 126 - pF
Reverse Transfer Capacitance Crss - 76 -
Total Gate Charge Qg* - 16.5 -
Gate-Source Charge Qgs* VDS=15V, VGS=10V, ID=6A - 4.0 - nC
Gate-Drain Charge Qgd* - 2.6 -
Turn-On Delay Time td(on)* - 7.4 -
Turn-On Rise Time tr* VDD=15V, VGS=10V - 27.7 -
ns
Turn-Off Delay Time td(off)* ID=6A, RG=3 - 12.2 -
Turn-Off Fall Time tf* - 7.6 -
Source-Drain Diode Ratings
Source-Drain Forward Voltage VSDF* IDR=1.7A, VGS=0V - 0.75 1.2 V
Note> * Pulse Test : Pulse width 300 , Duty cycle 2%
2011. 8. 30 Revision No : 0 2/5
KMB6D0DN30QB
Fig1. ID - VDS Fig2. RDS(on) - ID
Drain Source On Resistance RDS(ON) ()
10 0.16
Common Source
0.14 Ta= 25 C
Pulse Test
8
Drain Current ID (A)
VGS=10, 9, 8, 7, 6, 5, 4V 0.12
6 0.1
VGS=2.5V
0.08
VGS=4.5
4 0.06
0.04
2
VGS=1.5V 0.02 VGS=10.0
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20
Drain - Source Voltage VDS (V)
Drain Current ID (A)
Fig3. ID - VGS Fig4. RDS(ON) - Tj
1.6
Normalized On Resistance RDS(ON)
25
VGS = 10V
ID= 6A
125 C 25 C 1.4
Drain Current ID (A)
20
-55 C 1.2
15
1.0
10
0.8
5
0.6
0 0
0 1.0 2.0 3.0 4.0 5.0 6.0 -75 -50 -25 0 25 50 75 100 125 150
Gate - Source Voltage VGS (V) Junction Temperature Tj ( C )
Fig5. Vth - Tj Fig6. IS - VSDF
1.6 40
Normalized Threshold Voltage Vth
VDS = VGS
Reverse Drain Current IDR (A)
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