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SEMICONDUCTOR KMB6D6N30Q
TECHNICAL DATA N-Ch Trench MOSFET
General Description
Switching regulator and DC-DC Converter applications.
It s mainly suitable for power management in PC,
portable equipment and battery powered systems.
H
T
D P G L
FEATURES
VDSS=30V, ID=6.6A.
Low Drain-Source ON Resistance. A
: RDS(ON)=28m (typ.) @ VGS=10V DIM MILLIMETERS
A 5.05+0.25/-0.20
: RDS(ON)=56m (typ.) @ VGS=4.5V B1 _
3.90 + 0.3
Super High Dense Cell Design. 8 5 B2 _
6.00 + 0.4
D _
0.42 + 0.1
High Power and Current Handling Capability. G _
0.15 + 0.1
B1 B2
H _
1.4 + 0.2
1 4 L _
0.5 + 0.2
P 1.27 Typ.
T _
0.20 + 0.05
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 30 V
FLP-8 (1)
Gate-Source Voltage VGSS 20 V
DC ID * 6.6
Drain Current A
Pulsed (note1)
IDP * 26
Source-Drain Diode Current IS 1.7 A
Drain Power Dissipation PD * 2.5 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Ambient RthJA* 50 /W
* : Surface Mounted on FR4 Board, t 10sec.
PIN CONNECTION (TOP VIEW)
D D D D
S 1 8 D
S 2 7 D
S 3 6 D
G
G 4 5 D
S S S
2007. 3. 22 Revision No : 1 1/5
KMB6D6N30Q
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V, 30 - - V
Drain Cut-off Current IDSS VGS=0V, VDS=24V - - 1 A
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1.0 1.7 2.5 V
VGS=10V, ID=6A (Note 1) - 20 28
Drain-Source ON Resistance RDS(ON) m
VGS=4.5V, ID=3A (Note 1) - 42 56
ON State Drain Current ID(ON) VGS=10V, VDS=5V (Note 1) 20 - - A
Forward Transconductance gfs VDS=5V, ID=6A (Note 1) - 8 - S
Source-Drain Diode Forward Voltage VSD IS=1.7A, VGS=0V (Note 1) - 0.79 1.2 V
Dynamic (Note 2)
VDS=15V, ID=6A, VGS=10V (Fig.1) - 13.5 -
Total Gate Charge Qg
VDS=15V, ID=6A, VGS=4.5V (Fig.1) - 7.1 -
nC
Gate-Source Charge Qgs - 3 -
VDS=15V, ID=6A, VGS=4.5V (Fig.1)
Gate-Drain Charge Qgd - 2.8 -
Turn-on Delay time td(on) - 12.7 -
Turn-on Rise time tr VDD=15V, ID=1A, - 4.1 -
ns
Turn-off Delay time td(off) VGS=10V, RG=10 (Fig.2) - 19.4 -
Turn-off Fall time tf - 12.9 -
Input Capacitance Ciss - 630 -
Output Capacitance Coss VDS=15V, VGS=0V, f=1.0MHz - 170 - pF
Reverse transfer Capacitance Crss - 110 -
Note 1) Pulse test : Pulse width 300 , Duty Cycle 2%.
Note 2) Guaranteed by design. Not subject to production testing.
2007. 3. 22 Revision No : 1 2/5
KMB6D6N30Q
ID - VDS ID - VGS
20 25
VGS=4.5V
VGS=5V
16 20
Drain Current ID (A)
Drain Current ID (A)
VGS=10V
VGS=4V
12 15
8 VGS=3.5V 10 125 C
VGS=3V 25 C
4 5 -55 C
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.8 1.6 2.4 3.2 4.0 4.8
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
Vth - Tj IS - VSD
20
Normalized Threshold Voltage Vth
1.3
VDS = VGS VGS = 0V
Reverse Drain Current IS (A)
1.2 IDS = 250◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo