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SEMICONDUCTOR KMB7D0N40QA
TECHNICAL DATA N-Ch Trench MOSFET
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for power management in pc, portable H
T
equipment and battery powered systems. D P G L
FEATURES A
DIM MILLIMETERS
VDSS=40V, ID=7A. A _
4.85 + 0.2
B1 _
3.94 + 0.2
Drain-Source ON Resistance. B2 _
8 5 6.02 + 0.3
RDS(ON)=25m (Max.) @VGS=10V D _
0.4 + 0.1
B1 B2 G 0.15+0.1/-0.05
RDS(ON)=45m (Max.) @VGS=4.5V H _
1.63 + 0.2
Super High Dense Cell Design 1 4 L _
0.65 + 0.2
P 1.27
High Power and Current Handing Capability
T 0.20+0.1/-0.05
Maximum Ratings (Ta=25 Unless otherwise noted) FLP-8
CHARACTERISTIC SYMBOL PATING UNIT
Drain Source Voltage VDSS 40 V
Gate Source Voltage VGSS 25 V
DC ID * 7 A
Drain Current
Pulsed IDP 22 A
KMB7D0N
Drain Source Diode Forward Current IS 1.7 A 40QA
TA=25 2 W
Drain Power Dissipation PD *
TA=100 1.44 W
Maximum Junction Temperature Tj -55~150
Storage Temperature Range Tstg -55~150
Thermal Resistance, Junction to Ambient RthJA* 62.5 /W
Note) *Surface Mounted on 1 1 FR4 Board.
PIN CONNECTION (TOP VIEW)
S 1 8 D 1 8
2 7
S 2 7 D
3 6
S 3 6 D
4 5
G 4 5 D
2008. 1. 25 Revision No : 0 1/4
KMB7D0N40QA
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 40 - - V
Drain Cut-off Current IDSS VDS=32V, VGS=0V - - 1 A
Gate Leakage Current IGSS VGS= 25V, VDS=0V - - 100 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1 1.8 2.5 V
VGS=10.0V, ID=6A - 20 25
Drain-Source ON Resistance RDS(ON)* m
VGS=4.5V, ID=5A - 35 45
On-State Drain Current ID(ON)* VDS=5V, VGS=10V 15 - - A
Forward Transconductance gfs* VDS=5V, ID=6A - 8 - S
Dynamic
Input Capaclitance Ciss - 947 1231
Ouput Capacitance Coss VDS=25V, f=1MHz, VGS=OV - 117 152 pF
Reverse Transfer Capacitance Crss - 77 100
VDS=20V, VGS=10V, ID=6A - 18.2 24
Total Gate Charge Qg*
VDS=20V, VGS=4.5V, ID=6A - 8.7 12
nC
Gate-Source Charge Qgs* - 2.8 4
VDS=20V, VGS=4.5V, ID=6A
Gate-Drain Charge Qgd* - 3.3 5
Turn-On Delat Time td(on)* - 16.7 19
Turn-On Rise Time tr* VDD=20V, VGS=10V - 3.6 5
ns
Turn-On Deley Time td(off)* ID=1A, RG=3.3 - 28.7 38
Turn-On Fall Time tf* - 10.1 14
Source-Drain Diode Ratings
Source-Drain Forward Voltage VSDF* IDR=1.7A, VGS=0V - 0.78 1.2 V
Note) *Pulse Test : Pulse width 10 , Duty cycle 1%
2008. 1. 25 Revision No : 0 2/4
KMB7D0N40QA
Fig1. ID - VDS Fig2. RDS(on) - ID
Drain Source On Resistance RDS(ON) ()
20 0.2
VGS=10,5,4.5V Common Source Common Source
TA=25 C TA=25 C
Pulse Test Pulse Test
16 4.0V 0.16
Drain Current ID (A)
12 0.12
8 0.08
3.5V 4.5V
4 0.04
VGS=10.0V
VGS=3.0V
0 0
0 2 4 6 8 10 0 4 8 12 16 20
Drain - Source Voltage VDS (V) Drain - Current ID (A)
Fig3. ID - VGS Fig4. RDS(on) - Tj
24 200
Common Source Common Source
VDS=10V VDS=10V
Normalized Drain Source On
Pulse Test Pulse Test
Resistance RDS(ON) (m)
20
160
Drain Current ID (A)
16
120
12 25 C
80
8
Tc=-55 C
ID=6A
125 C 40
4
0 0
1 2 3 4 5 -80 -40 0 40 80 120 160
Gate-Source Volatage VGS (V)
Junction Temperature Tj ( C )
Fig5. Vth - Tj Fig6. IDR - VSDF
5 Common Source 10
Gate Threshold Voltage Vth (V)
Common Source
Reverse Drain Current IDR (A)
VGS=VDS TA= 25 C
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