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SEMICONDUCTOR KMB7D0DN40Q
TECHNICAL DATA Dual N-Ch Trench MOSFET
General Description
Switching regulator and DC-DC Converter applications.
It s mainly suitable for power management in PC,
H
portable equipment and battery powered systems. T
D P G L
FEATURES
VDSS=40V, ID=7A. A
Low Drain-Source ON Resistance. DIM MILLIMETERS
A 5.05+0.25/-0.20
: RDS(ON)=25m (Max.) @ VGS=10V B1 _
3.90 + 0.3
8 5 B2 _
6.00 + 0.4
: RDS(ON)=45m (Max.) @ VGS=4.5V
D _
0.42 + 0.1
Super High Dense Cell Design. G _
0.15 + 0.1
B1 B2
H _
1.4 + 0.2
High Power and Current Handling Capability
1 4 L _
0.5 + 0.2
P 1.27 Typ.
T _
0.20 + 0.05
FLP-8 (1)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 40 V
Gate-Source Voltage VGSS 25 V
DC ID * 7
Drain Current A
Pulsed (Note1)
IDP * 22
Source-Drain Diode Current IS* 1.7 A
Drain Power Dissipation PD * 2 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Ambient RthJA 62.5 /W
* : Surface Mounted on FR4 Board, t 10sec.
PIN CONNECTION (TOP VIEW) D1 D1 D2 D2
S1 1 8 D1
G1 2 7 D1
G1 G2
S2 3 6 D2
G2 4 5 D2
S1 S2
2007. 3. 9 Revision No : 1 1/5
KMB7D0DN40Q
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 40 - - V
Drain Cut-off Current IDSS VDS=32V, VGS=0V - - 1 A
Gate Leakage Current IGSS VGS= 25V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth VDS=VGS, ID=250 A (Note 1) 1.0 1.8 2.5 V
VGS=10V, ID=6A (Note 1) - 20 25
Drain-Source ON Resistance RDS(ON) m
VGS=4.5V, ID=5A (Note 1) - 35 45
ON State Drain Current ID(ON) VGS=10V, VDS=5V (Note 1) 15 - - A
Forward Transconductance gfs ID=6A, VDS=5V (Note 1) - 8 - S
Source-Drain Diode Forward Voltage VSD IS=1.7A, VGS=0V (Note 1) - 0.78 1.2 V
Dynamic (Note 2)
VDS=20V, ID=6A,
- 18.2 24
VGS=10V (Fig.1)
Total Gate Charge Qg
VDS=20V, ID=6A,
- 8.7 12 nC
VGS=4.5V (Fig.1)
Gate-Source Charge Qgs VDS=20V, ID=6A, - 2.8 4
Gate-Drain Charge Qgd VGS=4.5V (Fig.1) - 3.3 5
Turn-on Delay time td(on) - 16.7 19
Turn-on Rise time tr VDD=20V, ID=1A, VGS=10V - 3.6 5
ns
Turn-off Delay time td(off) RG=3.3 (Fig.2) - 28.7 38
Turn-off Fall time tf - 10.1 14
Input Capacitance Ciss - 947 1231
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 117 152 pF
Reverse transfer Capacitance Crss - 77 100
Note 1) Pulse test : Pulse width 300 , Duty Cycle 2%.
Note 2) Guaranteed by design. Not subject to production testing.
2007. 3. 9 Revision No : 1 2/5
KMB7D0DN40Q
ID - VDS ID - VGS
20 25
VGS=10, 9, 8, 7, 6, 5V
16
Drain Current ID (A)
Drain Current ID (A)
20
VGS= 4V
12 15
Tj = 125 C
8 10
Tj = 25 C
4 5
VGS= 3V Tj = -55 C
0 0
0 2 4 6 8 10 12 0 0.6 1.2 1.8 2.4 3.0 3.6
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
IS - VSD
Vth - Tj
20
1.3
Normalized Threshold Voltage Vth
Reverse Drain Current IS (A)
VDS = VGS
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