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SEMICONDUCTOR KMB7D0DN40QB
TECHNICAL DATA Dual N-Ch Trench MOSFET
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
H
characteristics. It is mainly suitable for power management in PC, portable
T
equipment and battery powered systems. D P G L
U
A
FEATURES
DIM MILLIMETERS
VDSS=40V, ID=7A. A _
4.85 + 0.2
B1 _
3.94 + 0.2
Drain to Source on Resistance. 8 5
B2 _
6.02 + 0.3
RDS(ON)=25m (Max.) @VGS=10V D _
0.4 + 0.1
B1 B2 G 0.15+0.1/-0.05
RDS(ON)=45m (Max.) @VGS=4.5V
1 H _
1.63 + 0.2
4
L _
0.65 + 0.2
P 1.27
T 0.20+0.1/-0.05
U 0.1 MAX
Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC SYMBOL PATING UNIT FLP-8
Drain to Source Voltage VDSS 40 V
Gate to Source Voltage VGSS 20 V
Ta=25 (Note1) ID 7 A
Drain Current
Pulsed IDP 36 A
Drain to Source Diode Forward Current IS 7 A
Ta=25 (Note1) 2 W KMB7D0DN
Drain Power Dissipation PD 40QB
Ta=100 (Note1) 1.44 W
Maximum Junction Temperature Tj -55~150
Storage Temperature Range Tstg -55~150
Thermal Resistance, Junction to Ambient(Note1) RthJA 62.5 /W
Note1) Surface Mounted on 1 1 FR4 Board., t 10sec
PIN CONNECTION (TOP VIEW)
S1 1 8 D1 1 8
G1 2 7 D1 2 7
S2 3 6
3 6 D2
G2 4 5 D2 4 5
2012. 1. 13 Revision No : 0 1/5
KMB7D0DN40QB
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain to Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 40 - - V
Drain Cut-off Current IDSS VDS=40V, VGS=0V - - 1 A
Gate to Source Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Gate to Source Threshold Voltage Vth VDS=VGS, ID=250 A 1 1.8 2.5 V
VGS=10V, ID=7A (Note2) - 20 25
Drain to Source on Resistance RDS(ON) m
VGS=4.5V, ID=7A (Note2) - 35 45
On-State Drain Current ID(ON) VDS=5V, VGS=10V (Note2) 15 - - A
Forward Transconductance gfs VDS=5V, ID=3.5A (Note2) - 11 - S
Dynamic
Input Capaclitance Ciss - 560 -
Ouput Capacitance Coss VDS=20V, f=1MHz, VGS=0V - 105 - pF
Reverse Transfer Capacitance Crss - 55 -
Total Gate Charge Qg - 7.8 -
Gate to Source Charge Qgs VDS=20V, VGS=4.5V, ID=7A (Note2) - 4.0 - nC
Gate to Drain Charge Qgd - 2.6 -
Turn-On Delay Time td(on) - 13 -
Turn-On Rise Time tr VDD=20V, VGS=10V - 11 -
ns
Turn-Off Delay Time td(off) ID=7A, RG=3.3 (Note2) - 26 -
Turn-Off Fall Time tf - 11 -
Source to Drain Diode Ratings
Source to Drain Forward Voltage VSD IS=7A, VGS=0V (Note2) - 0.85 1.2 V
Note2) Pulse Test : Pulse width 10 , Duty cycle 1%
2012. 1. 13 Revision No : 0 2/5
KMB7D0DN40QB
2012. 1. 13 Revision No : 0 3/5
KMB7D0DN40QB
2012. 1. 13 Revision No : 0 4/5
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2012. 1. 13 Revision No : 0 5/5
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