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kmc7d0cn20c


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                                   SEMICONDUCTOR                                           KMC7D0CN20C
                                               TECHNICAL DATA                                  Dual N-Ch Trench MOSFET


 General Description
 Switching regulator and DC-DC Converter applications.                                     C

 It s mainly suitable for Li-ion battery pack.
                                                                                                                         D
                                                                                      8        5

                                                                                                                                          A
 FEATURES                                                                                               E1   E
                                                                                                                     B
                                                                                                                                     A1
   VDSS=20V, ID=7A.
                                                                                      1        4
   Low Drain-Source ON Resistance.
    : RDS(ON)=20m (Max.) @ VGS=4.0V
                                                                                                                         DIM      MILLIMETERS
    : RDS(ON)=28m (Max.) @ VGS=2.5V                                                                                       A          1.2 MAX
                                                                                                                          A1             _
                                                                                                                                    0.10 + 0.05
   ESD Protection.
                                                                                                                             B           _
                                                                                                                                    0.22 + 0.05
   Super High Dense Cell Design.                                                                             GAUGE           C       0.65 Typ.
                                                                                                             PLANE                       _
                                                                                                                                    3.10 + 0.10
                                                                                                                             D
                                                                                                                             E           _
                                                                                                                                    6.40 + 0.20
                                                                                                                             E1          _
                                                                                                                                    4.40 + 0.10
                                                                                                                             L           _
                                                                                                                                    0.60 + 0.10




                                                                                    0.25
 MAXIMUM RATING (Ta=25                     )                                                                 L


             CHARACTERISTIC                      SYMBOL          RATING      UNIT
   Drain-Source Voltage                             VDSS           20         V
                                                                                                             TSSOP-8
   Gate-Source Voltage                              VGSS            10        V
                              DC                     ID *           7
   Drain Current                                                              A
                              Pulsed (Note1)         IDP *         28
   Source-Drain Diode Current                        IS *          1.7        A
   Drain Power Dissipation                           PD *          1.5        W
   Maximum Junction Temperature                       Tj           150                              D
   Storage Temperature Range                         Tstg        -55 150
   Thermal Resistance, Junction to Ambient          RthJA*        83.3        /W
  * : Surface Mounted on FR4 Board, t 10sec.
                                                                                    G1




                                                                                               S1       S1
                             PIN CONNECTION (TOP VIEW)

                                                             8          D
                                                                                                    D
                             D         1

                             S1        2                     7          S2

                             S1        3                     6          S2

                             G1        4                     5          G2

                                                                                    G2




                                                                                               S2       S2




2006. 4. 6                        Revision No : 0                                                                                                 1/5
                                                        KMC7D0CN20C

 ELECTRICAL CHARACTERISTICS (Ta=25                             )

              CHARACTERISTIC                        SYMBOL                 TEST CONDITION             MIN.   TYP.   MAX.   UNIT
   Static
   Drain-Source Breakdown Voltage                    BVDSS         ID=250 A, VGS=0V,                   20     -       -     V

   Drain Cut-off Current                             IDSS          VDS=16V, VGS=0V                     -      -      1      A

   Gate Leakage Current                              IGSS          VGS= 10V, VDS=0V                    -      -       10    A
   Gate Threshold Voltage                             Vth          VDS=VGS, ID=250 A     (Note 1)     0.5    0.7     1.5    V
                                                                   VGS=4.0V, ID=5A     (Note 1)        -     16.5    20
   Drain-Source ON Resistance                       RDS(ON)                                                                m
                                                                   VGS=2.5V, ID=3A     (Note 1)        -      23     28
   Forward Transconductance                            gfs         VDS=5V, ID=5A       (Note 1)        -      12      -     S
   Source-Drain Diode Forward Voltage                VSD           IS=1.7A, VGS=0V     (Note 1)        -     0.8     1.2    V
   Dynamic (Note 2)
   Total Gate Charge                                   Qg                                              -     11.5     -
                                                                   VDS=10V, ID=5A
   Gate-Source Charge                                 Qgs                                              -     2.4      -     nC
                                                                   VGS=4.0V                 (Fig.1)
   Gate-Drain Charge                                  Qgd                                              -      4       -
   Turn-on Delay time                                td(on)                                            -     7.6      -
   Turn-on Rise time                                   tr          VDD=10V, ID=1A, VGEN=4.0V,          -     11.2     -
                                                                                                                            ns
   Turn-off Delay time                               td(off)       RL=10 , RG=10           (Fig.2)     -     40.2     -
   Turn-off Fall time                                  tf                                              -     19.1     -
   Input Capacitance                                  Ciss                                             -     999      -
   Output Capacitance                                 Coss         VDS=8V, VGS=0V, f=1.0MHz            -     234      -     pF
   Reverse transfer Capacitance                       Crss                                             -     144      -

 Note 1) Pulse test : Pulse width 300   , Duty Cycle        2%.
 Note 2) Guaranteed by design. Not subject to production testing.




2006. 4. 6                        Revision No : 0                                                                                 2/5
                               KMC7D0CN20C




2006. 4. 6   Revision No : 0                 3/5
                               KMC7D0CN20C




2006. 4. 6   Revision No : 0                 4/5
                               KMC7D0CN20C




2006. 4. 6   Revision No : 0                 5/5



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