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SEMICONDUCTOR KMD4D5P30XA
TECHNICAL DATA P-CH Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for cellular phone and netebook
computer power management and other battery powered circuits. D H
FEATURES E
J
VDSS=-30V, ID=-4.5A.
Drain-Source ON Resistance. A
DIM MILLIMETERS
A _
3.00 + 0.15
: RDS(ON)=60m (Max.) @ VGS=-10V F
B _
1.65 + 0.1
C _
2.85 + 0.2
: RDS(ON)=100m (Max.) @ VGS=-4.5V
D 1.0+0.15/-0.1
6 4
E 0~0.15
B C F 0.95 TYP
G _
0.45 + 0.1
1 3 H _
0.15 + 0.05
J MIN 0.21
G
MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS -30 V
TSOP-6
Gate-Source Voltage VGSS 20 V
DC@Ta=25 I D* -4.5 A
Drain Current
Pulsed IDP -18 A
Drain Power Dissipation @Ta=25 PD* 2 W Marking
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Type Name
Thermal Resistance, Junction to Ambient RthJA* 62.5 /W
Lot No.
Note) * : Surface Mounted on 1 1 FR4 Board, t 5sec M43
Pin No.
PIN CONNECTION (TOP VIEW)
1 6 1 6
D D
D 2 5 D 2 5
G 3 4 S 3 4
2008. 6. 2 Revision No : 1 1/4
KMD4D5P30XA
ELECTRICAL CHARACTERISTICS (Ta=25 Unless otherwise noted)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=-250 A, -30 - - V
VGS=0V, VDS=-30V - - -1
Drain Cut-off Current IDSS A
VGS=0V, VDS=-30V, Tj=-55 - - -10
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 10 A
Gate Threshold Voltage Vth* VDS=VGS, ID=-250 A -1.0 - -3.0 V
VGS=-10V, ID=-2.2A - 50 60
Drain-Source ON Resistance RDS(ON)* m
VGS=-4.5V, ID=-2.2A - 75 100
Forward Transconductance gfs* VDS=-10V, ID=-2.2A - 7.4 - S
Dynamic
Input Capacitance Ciss - 560 -
Output Capacitance Coss VDS=-15V, VGS=0V, f=1MHz - 105 - pF
Reverse Transfer Capacitance Crss - 62 -
Gate resistance Rg VGS=0V, VDS=0V, f=1MHz - 4.0 - k
Total Gate Charge (Vgs=10V) Qg* - 13 -
Gate-Source Charge Qgs* VDS=-15V, VGS=-10V, ID=-4.5A - 2.6 - nC
Gate-Drain Charge Qgd* - 2.9 -
Turn-on Delay time td(on)* - 1.3 -
Turn-on Rise time tr* VDS=-15V, VGS=-10V, - 1.7 -
s
Turn-off Delay time td(off)* ID=-2.2A, RG=4.7 - 7.5 -
Turn-off Fall time tf* - 4.1 -
Source-Drain Diode Ratings
Source Drain Forward Voltage VSDF* VGS=0V, IS=-4.5A - -0.7 -1.2 V
Note ) *Pulse Test : Pulse Width 300 , Duty Cycle 2%
2008. 6. 2 Revision No : 1 2/4
KMD4D5P30XA
2008. 6. 2 Revision No : 1 3/4
KMD4D5P30XA
2008. 6. 2 Revision No : 1 4/4
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