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SEMICONDUCTOR KMD6D0DN40Q
TECHNICAL DATA Dual N-Ch Trench MOSFET
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for DC/DC Converters. H
T
D P G L
FEATURES
VDSS=40V, ID=6A. A
DIM MILLIMETERS
Drain-Source ON Resistance. A _
4.85 + 0.2
B1 _
3.94 + 0.2
RDS(ON)=38m (Max.) @VGS=10V B2 _
8 5 6.02 + 0.3
RDS(ON)=50m (Max.) @VGS=4.5V D _
0.4 + 0.1
B1 B2 G 0.15+0.1/-0.05
Super High Dense Cell Design H _
1.63 + 0.2
Very fast switching 1 4 L _
0.65 + 0.2
P 1.27
T 0.20+0.1/-0.05
MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC SYMBOL RATING UNIT
Drain Source Voltage VDSS 40 V
FLP-8
Gate Source Voltage VGSS 12 V
Ta=25 ID * 6 A
Drain Current
Pulsed(Note1) IDP 24 A
Peak Diode Recovery dv/dt (Note 2) dv/dt 4.5 V/ns
Peak Diode Recovery di/dt di/dt 200 A/us Marking
Single pulsed Avalanche Energy (Note 3) EAS 66 mJ Type Name
Repetitive Avalanche Energy (Note 1) EAR 2.7 mJ
Maximum Junction Temperature Tj -50~150 KMD6D0DN
40Q
Storage Temperature Range Tstg -50~150
Lot No.
101
Thermal Resistance, Junction to Ambient RthJA* 62.5 /W
* : Surface Mounted on FR4 Board (25mm 25mm, 1.5t, t 10sec)
PIN CONNECTION (TOP VIEW)
S1 1 8 D1 1 8
G1 2 7 D1 2 7
S2 3 6 D2 3 6
G2 4 5 D2 4 5
2012. 7. 26 Revision No : 0 1/5
KMD6D0DN40Q
ELECTRICAL CHARACTERISTICS (Tj=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 40 - - V
Drain Cut-off Current IDSS VDS=40V, VGS=0V - - 1 A
Gate Leakage Current IGSS VGS= 12V, VDS=0V - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1.0 2.0 2.5 V
VGS=10.0V, ID=6A - 27 38
Drain-Source ON Resistance RDS(ON) m
VGS=4.5V, ID=5A - 35 50
Forward Transconductance gfs VDS=10V, ID=6A(Note4, 5) - 10 - S
Dynamic
Input Capacitance Ciss - 460 -
Ouput Capacitance Coss VDS=15V, f=1MHz, VGS=0V - 80 - pF
Reverse Transfer Capacitance Crss - 50 -
Total Gate Charge Qg - 8.0 -
Gate-Source Charge Qgs VDS=20V, VGS=10V, ID=6A (Note4, 5) - 1.5 - nC
Gate-Drain Charge Qgd - 2.0 -
Total Gate Charge Qg VDS=20V, VGS=5V, ID=6A (Note4, 5) - 4.1 - nC
Turn-On Delay Time td(on) - 12 -
Turn-On Rise Time tr VDD=20V, VGS=10V - 8 -
ns
Turn-Off Delay Time td(off) ID=6A, RG=6 (Note4, 5) - 35 -
Turn-Off Fall Time tf - 6 -
Source-Drain Diode Ratings
Source-Drain Forward Voltage VSDF IDR=6A, VGS=0V - 0.87 1.2 V
Note1) Repetivity rating : Pulse width Limited by juntion temperature.
Note2) IS 6A, dI/dt 100A/ , VDD BVDSS, Starting Tj = 25 .
Note3) L = 1mH, IAS = 6A, VDD = 32V, Rg = 25 , Starting Tj = 25 .
Note4) Pulse test : Pulse width 300 , Duty cycle 2%
Note5) Essentially independenl of operating temperature.
2012. 7. 26 Revision No : 0 2/5
KMD6D0DN40Q
Fig1. ID - VDS Fig2. RDS(on) - ID
Drain Source On Resistance RDS(ON) ()
20 0.16
VGS=4.5 Common Source
VGS=10
Common Source 0.14 Tc= 25 C
Pulse Test
16 Tc= 25 C
Drain Current ID (A)
VGS=5 Pulse Test 0.12
12 0.1
VGS=4.0
0.08
8 0.06
V GS=4.5 VGS=10V
0.04
4 VGS=3.5
VGS=3.0
0.02
0 0
0 2 4 6 8 10 0 5 10 15 20
Drain - Source Voltage VDS (V) Drain Current ID (A)
Fig3. ID - VGS Fig4. RDS(on) - Tj
102 Common Source 100
Common Source
VDS=10V VDS=10V
Drain Source On Resistance
Pulse Test Pulse Test
80
Drain Current ID (A)
RDS(ON) (m)
60
1
10
40
25 C
100 C
20
100 0
2 3 4 5 6 7 8 9 10 -80 -40 0 40 80 120 160
Gate - Source Voltage VGS (V) Junction Temperature Tj ( C )
Fig5. Vth - Tj Fig6. IDR - VSDF
5 Common Source 102
Gate Threshold Voltage Vth (V)
Reverse Drain Current IDR (A)
Common Drain
VGS=VDS VGS=0V
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