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SEMICONDUCTOR KMD7D5P40QA
TECHNICAL DATA P-Ch Trench MOSFET
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as low on resistance, low
gate charge and excellent avalanche characteristiscs. It is mainly suitable for
H
battery protection circuit.
T
D P G L
U
FEATURES
A
VDSS=-40V, ID=-7.5A.
DIM MILLIMETERS
Drain-Source ON Resistance. A _
4.85 + 0.2
B1 _
3.94 + 0.2
RDS(ON)=30m (Max.) @ VGS=-10V 8 5
B2 _
6.02 + 0.3
RDS(ON)=37m (Max.) @ VGS=-4.5V D _
0.4 + 0.1
B1 B2 G 0.15+0.1/-0.05
Super High Dense Cell Design
1 H _
1.63 + 0.2
4
L _
0.65 + 0.2
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) P 1.27
T 0.20+0.1/-0.05
CHARACTERISTIC SYMBOL RATING UNIT U 0.1 MAX
Drain Source Voltage VDSS -40 V
Gate Source Voltage VGSS 20 V
DC@Ta=25 I D* -7.5 A FLP-8
Drain Current
Pulsed IDP -30 A
Drain Source Diode Forward Current IS -30 A
Drain Power Dissipation DC@Ta=25 PD* 2.0 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55~150
Thermal Resistance, Junction to Ambient RthJA* 62.5 /W KMD7D5P
40QA
Note : *Surface Mounted on 1 1 FR4 Board, t 10sec
PIN CONNECTION (TOP VIEW)
S 1 8 D 1 8
2 7
S 2 7 D
3 6
S 3 6 D
4 5
G 4 5 D
2012. 11. 27 Revision No : 2 1/4
KMD7D5P40QA
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=-250 A -40 - - V
Drain Cut-off Current IDSS VDS=-40V, VGS=0V - - -10 A
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=-250 A -1.0 - -3.0 V
VGS=-10V, ID=-3.8A - 24 30
Drain-Source ON Resistance RDS(ON)* m
VGS=-4.5V, ID=-3.8A - 29 37
Forward Transconductance gfs* VDS=-10V, ID=-3.8A - 1.2 - S
Dynamic
Input Capaclitance Ciss - 1,480 -
Output Capacitance Coss VDS = 20V, f=MHz, VGS=0V - 240 - pF
Reverse Transfer Capacitance Crss - 140 -
Gate Resistance Rg VGS=0V, VDS=0V, f=1MHz - 8 -
Total Gate Charge Qg* - 32.0 -
Gate-Source Charge Qgs* VDS=-32V, VGS=-10V, ID=-7.5A - 5.5 - nC
Gate-Drain Charge Qgd* - 9.0 -
Turn-On Delay Time td(on)* - 11 -
Turn-On Rise Time tr* VDD=-20V, VGS=-10V - 20 -
nS
Turn-Off Delay Time td(off)* ID=-7.5A, Rg=4.7 - 60 -
Turn-Off Fall Time tf* - 22 -
Source-Drain Diode Ratings
Source-Drain Forward Voltage VSDF* VGS=0V, IDR=-7.5A, - - -1.2 V
Note) *Pulse Test : Pulse width 300 , Duty cycle 2%
2012. 11. 27 Revision No : 2 2/4
KMD7D5P40QA
2012. 11. 27 Revision No : 2 3/4
KMD7D5P40QA
2012. 11. 27 Revision No : 2 4/4
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