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SEMICONDUCTOR KML0D4N20TV
TECHNICAL DATA N-Ch Trench MOSFET
General Description
It s mainly suitable for Load Switching Cell Phones, Battery Powered E
Systems and Level-Shifter. B
2
D
A
F
DIM MILLIMETERS
FEATURES
G
1 3 A _
1.2 +0.05
_
I
VDSS=20V, ID=0.4A B 0.8 +0.05
C 0.34 Max
Drain-Soure ON Resistance D _
0.3 + 0.05
E _
1.2 + 0.05
: RDS(ON)=0.70 @ VGS=4.5V _
0.8 + 0.05
F
: RDS(ON)=0.85 @ VGS=2.5V G 0.40
H _
0.11 + 0.05
: RDS(ON)=1.25 @ VGS=1.8V J J
I _
0.2 + 0.05
J 5
Super High Dense Cell Design
C
H
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL N-Ch UNIT TVSM
Drain-Source Voltage VDSS 20 V
Gate-Source Voltage VGSS 6 V
DC @TA=25 400
ID*
Drain Current DC @TA=85 280
mA
Pulsed IDP 650
Source-Drain Diode Current IS 125
Drain Power Dissipation P D* 170 mW
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Ambient RthJA* 730 /W
Note 1) *Surface Mounted on 1 1 FR4 Board. t 5 sec
2013. 1. 10 Revision No : 0 1/4
KML0D4N20TV
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 20 - - V
Drain Cut-off Current IDSS VGS=0V, VDS=16V - 0.3 100 nA
Gate Leakage Current IGSS VGS= 4.5V, VDS=0V - 0.5 1.0 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 0.45 - 1.0 V
VGS=4.5V, ID=400mA - 0.41 0.70
Drain-Source ON Resistance RDS(ON)* VGS=2.5V, ID=350mA - 0.53 0.85
VGS=1.8V, ID=300mA - 0.70 1.25
Forward Transconductance gfs* VDS=10V, ID=400mA - 1.0 - S
Source-Drain Diode Forward Voltage VSD* IS=150mA, VGS=0V - 0.8 1.2 V
Dynamic
Total Gate Charge Qg* - 430 -
Gate-Source Charge Qgs* VDS=10V, ID=250mA, VGS=4.5V - 45 - pC
Gate-Drain Charge Qgd* - 60 -
Turn-on Delay time td(on)* - 5 -
Turn-on Rise time tr - 3 -
VDD=10V, ID=200mA,
ns
td(off)* VGS=4.5V, RG=10
Turn-off Delay time - 15 -
Turn-off Fall time tf - 7 -
Note 2) *Pulse test : Pulse width 300 , Duty Cycle 2%.
2013. 1. 10 Revision No : 0 2/4
KML0D4N20TV
2013. 1. 10 Revision No : 0 3/4
KML0D4N20TV
2013. 1. 10 Revision No : 0 4/4
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