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SEMICONDUCTOR KN2907/A
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Low Leakage Current
A
: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.
Low Saturation Voltage N DIM MILLIMETERS
E A 4.70 MAX
K
: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. G B 4.80 MAX
D C 3.70 MAX
Complementary to the KN2222/2222A.
J
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
H J _
14.00 + 0.50
F F K 0.55 MAX
MAXIMUM RATING (Ta=25 ) L 2.30
M 0.45 MAX
RATING N 1.00
CHARACTERISTIC SYMBOL UNIT
C
1 2 3
L
M
KN2907 KN2907A
1. EMITTER
Collector-Base Voltage VCBO -60 V 2. BASE
3. COLLECTOR
Collector-Emitter Voltage VCEO -40 -60 V
Emitter-Base Voltage VEBO -5 V
TO-92
Collector Current IC -600 mA
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
1996. 1. 28 Revision No : 0 1/3
KN2907/A
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICEX VCE=-30V, VEB=-0.5V - - -50 nA
KN2907 - - -20
Collector Cut-off Current ICBO VCB=-50V, IE=0 nA
KN2907A - - -10
Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A, IE=0 -60 - - V
Collector-Emitter * KN2907 -40 - -
V(BR)CEO IC=-10mA, IB=0 V
Breakdown Voltage KN2907A -60 - -
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A, IC=0 -5 - - V
KN2907 35 - -
hFE(1) IC=-0.1mA, VCE=-10V
KN2907A 75 - -
KN2907 50 - -
hFE(2) IC=-1.0mA, VCE=-10V
KN2907A 100 - -
KN2907 75 - -
DC Current Gain hFE(3) IC=-10mA, VCE=-10V
KN2907A 100 - -
KN2907
hFE(4) * IC=-150mA, VCE=-10V 100 - 300
KN2907A
KN2907 30 - -
hFE(5) * IC=-500mA, VCE=-10V
KN2907A 50 - -
VCE(sat)1 IC=-150mA, IB=-15mA - - -0.4
Collector-Emitter Saturation Voltage * V
VCE(sat)2 IC=-500mA, IB=-50mA - - -1.6
VBE(sat)1 IC=-150mA, IB=-15mA - - -1.3
Base-Emitter Saturation Voltage * V
VBE(sat)2 IC=-500mA, IB=-50mA - - -2.6
Transition Frequency fT VCE=-20V, IC=-50mA, f=100MHz 200 - - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - - 8 pF
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
1996. 1. 28 Revision No : 0 2/3
KN2907/A
h FE - I C C ob - V CB
1k 12
VCE =-10V I E =0
f=1MHz
500 10
DC CURRENT GAIN h FE
CAPACITANCE Cob (pF)
300
8
100 6
50 4
30
2
10 0
-1 -3 -10 -30 -100 -300 -1k -1 -3 -10 -30 -100 -200
COLLECTOR CURRENT I C (mA) COLLECTOR-BASE VOLTAGE V CB (V)
V BE(sat) ,VCE(sat) - I C Pc - Ta
-10 700
COLLECTOR POWER DISSIPATION
I C /IB =10
-5 600
SATURATION VOLTAGE
-3
V BE(sat) ,VCE(sat) (V)
V BE(sat) 500
-1
PC (mW)
-0.5 400
-0.3
300
-0.1
VCE(sat) 200
-0.05
-0.03 100
-0.01 0
-1 -3 -10 -30 -100 -300 -1k 0 25 50 75 100 125 150 175
COLLECTOR CURRENT I C (mA) AMBIENT TEMPERATURE Ta ( C)
1996. 1. 28 Revision No : 0 3/3
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