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SEMICONDUCTOR KN4400S/4401S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
FEATURES L B L
DIM MILLIMETERS
Complementary to the KN4402S/4403S A _
2.93 + 0.20
B 1.30+0.20/-0.15
C 1.30 MAX
D
2 3 D 0.45+0.15/-0.05
A
G
E 2.40+0.30/-0.20
H
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
L 0.55
P P
MAXIMUM RATING (Ta=25 ) M 0.20 MIN
N 1.00+0.20/-0.10
CHARACTERISTIC SYMBOL RATING UNIT
N
C
P 7
J
Collector-Base Voltage VCBO 60 V M
K
Collector-Emitter Voltage VCEO 40 V
1. EMITTER
Emitter-Base Voltage VEBO 6 V 2. BASE
3. COLLECTOR
Collector Current IC 600 mA
Collector Power Dissipation PC * 350 mW
Junction Temperature Tj 150 SOT-23
Storage Temperature Range Tstg -55 150
Note : * Package Mounted On 99.5% Alumina 10 8 0.6 )
Marking
Type Name Lot No. Lot No.
ZTA Type Name
ZUA
MARK SPEC
TYPE MARK
KN4400S ZTA
KN4401S ZUA
2007. 11. 12 Revision No : 2 1/3
KN4400S/4401S
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICEX VCE=35V, VEB=0.4V - - 100 nA
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=6V, IC=0 - - 100 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=100 A, IE=0 60 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 40 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=100 A, IC=0 6.0 - - V
KN4401S hFE(1) VCE=1V, IC=0.1mA 20 - -
KN4400S hFE(1) 20 - -
VCE=1V, IC=1mA
KN4401S hFE(2) 40 - -
KN4400S hFE(2) 40 - -
VCE=1V, IC=10mA
DC Current Gain * KN4401S hFE(3) 80 - -
KN4400S hFE(3) 50 - 150
VCE=1V, IC=150mA
KN4401S hFE(4) 100 - 300
KN4400S hFE(4) 20 - -
VCE=2V, IC=500mA
KN4401S hFE(5) 40 - -
VCE(sat) 1 IC=150mA, IB=15mA - - 0.4
Collector-Emitter Saturation Voltage * V
VCE(sat) 2 IC=500mA, IB=50mA - - 0.75
VBE(sat) 1 IC=150mA, IB=15mA 0.75 - 0.95
Base-Emitter Saturation Voltage * V
VBE(sat) 2 IC=500mA, IB=50mA - - 1.2
KN4400S 200 - -
Transition Frequency fT VCE=10V, IC=20mA, f=100MHz MHz
KN4401S 250 - -
Collector Output Capacitance Cob VCB=5V, IE=0, f=1MHz - - 6.5 pF
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
2007. 11. 12 Revision No : 2 2/3
KN4400S/4401S
hFE - IC Cob - VCB
1k 20
VCE=1V IE=0
DC CURRENT GAIN hFE
CAPACITANCE Cob (pF)
500 f=100kHz
10
300
5
100
3
50
30
10 1
1 3 10 30 100 300 1k 1 3 10 30 100 300
COLLECTOR CURRENT IC (mA) COLLECTOR-BASE VOLTAGE VCB (V)
VBE(sat), VCE(sat) - IC SAFE OPERATING AREA
10 10000
COLLECTOR CURRENT IC (mA)
IC/IB=10
5
SATURATION VOLTAGE
3 IC MAX(PULSE)* 10mS*
VBE(sat), VCE(sat) (V)
1000
VBE(sat)
1
0.5 IC MAX(CONTINUOUS) 1mS*
0.3 100
DC OPERATION(Ta=25 C )
0.1
VCE(sat) 10
0.05
0.03
* SINGLE NONREPETITIVE PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN TEMPERATURE
0.01 1
1 3 10 30 100 300 1k 0.1 1 10 100
COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VCE (V)
2007. 11. 12 Revision No : 2 3/3
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