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SEMICONDUCTOR KRA110S~KRA114S
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
E
L B L
FEATURES DIM MILLIMETERS
_
2.93 + 0.20
With Built-in Bias Resistors. A
B 1.30+0.20/-0.15
Simplify Circuit Design. C 1.30 MAX
D
2 3 D 0.40+0.15/-0.05
Reduce a Quantity of Parts and Manufacturing Process.
A
G
E 2.40+0.30/-0.20
H
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
L 0.55
P P
M 0.20 MIN
N 1.00+0.20/-0.10
EQUIVALENT CIRCUIT
N
C
P 7
J
Q 0.1 MAX
K
M
C
R1 1. EMITTER
B 2. BASE
3. COLLECTOR
E
SOT-23
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -100 mA
Collector Power Dissipation PC 200 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Marking
MARK SPEC
Lot No.
TYPE KRA110S KRA111S KRA112S KRA113S KRA114S
MARK PK PM PN PO PP Type Name
2008. 10. 29 Revision No : 3 1/4
KRA110S~KRA114S
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -100 nA
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 nA
DC Current Gain hFE VCE=-5V, IC=-1mA 120 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-10mA, IB=-0.5mA - -0.1 -0.3 V
Transition Frequency fT * VCE=-10V, IC=-5mA - 250 - MHz
KRA110S 3.29 4.7 6.11
KRA111S 7 10 13
Input Resistor KRA112S R1 70 100 130 k
KRA113S 15.4 22 28.6
KRA114S 32.9 47 61.1
KRA110S - 0.2 -
KRA111S - 0.065 -
Rise
KRA112S tr - 0.4 -
Time
KRA113S - 0.1 -
KRA114S - 0.15 -
KRA110S - 2.0 -
KRA111S VO=-5V - 1.7 -
Switching Storage
KRA112S tstg VIN=-5V - 3.0 - S
Time Time
KRA113S RL=1k - 2.0 -
KRA114S - 1.5 -
KRA110S - 0.3 -
KRA111S - 0.3 -
Fall
KRA112S tf - 1.7 -
Time
KRA113S - 0.8 -
KRA114S - 1.5 -
Note : * Characteristic of Transistor Only.
2008. 10. 29 Revision No : 3 2/4
KRA110S~KRA114S
h FE - I C VCE(sat) - I C
KRA110S KRA110S
COLLECTOR-EMITTER SATURATION
2k -2
I C /IB =20
1k -1
DC CURRENT GAIN h FE
VOLTAGE V CE(sat) (V)
500 Ta=100 C -0.5
300 -0.3
Ta=25 C
Ta=-25 C
100 -0.1
Ta=100 C
50 -0.05
30 -0.03
Ta=25 C
VCE =-5V Ta=-25 C
10 -0.01
-0.1 -0.3 -1 -3 -10 -30 -100 -0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
h FE - I C VCE(sat) - I C
KRA111S KRA111S
COLLECTOR-EMITTER SATURATION
2k -2
I C /I B =20
1k -1
DC CURRENT GAIN h FE
VOLTAGE V CE(sat) (V)
500 -0.5
300 Ta=100 C -0.3
Ta=25 C
Ta=-25 C
100 -0.1
Ta=100 C
50 -0.05
30 -0.03 Ta=25 C
VCE =-5V Ta=-25 C
10 -0.01
-0.1 -0.3 -1 -3 -10 -30 -100 -0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
h FE - I C VCE(sat) - I C
KRA112S KRA112S
COLLECTOR-EMITTER SATURATION
2k -2
IC /I B =20
1k -1
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
500 -0.5
300 Ta=100 C -0.3
Ta=25 C -0.1
100 Ta=-25 C
Ta=100 C
50 -0.05
30 -0.03 Ta=25 C
VCE =-5V Ta=-25 C
10 -0.01
-0.1 -0.3 -1 -3 -10 -30 -100 -0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
2008. 10. 29 Revision No : 3 3/4
KRA110S~KRA114S
h FE - I C VCE(sat) - I C
KRA113S KRA113S
COLLECTOR-EMITTER SATURATION
2k -2
I C /I B =20
1k -1
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
500 -0.5
300 Ta=100 C -0.3
Ta=25 C
100 Ta=-25 C -0.1
Ta=100 C
50 -0.05
30 -0.03 Ta=25 C
VCE =-5V Ta=-25 C
10 -0.01
-0.1 -0.3 -1 -3 -10 -30 -100 -0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
h FE - I C VCE(sat) - I C
KRA114S KRA114S
COLLECTOR-EMITTER SATURATION
2k -2
I C /I B =20
1k -1
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
500 -0.5
300 Ta=100 C -0.3
Ta=25 C
Ta=-25 C
100 -0.1
Ta=100 C
50 -0.05
30 -0.03 Ta=25 C
Ta=-25 C
VCE =-5V
10 -0.01
-0.1 -0.3 -1 -3 -10 -30 -100 -0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
2008. 10. 29 Revision No : 3 4/4
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