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SEMICONDUCTOR KRA119S
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
FEATURES E
L B L
With Built-in Bias Resistors. DIM MILLIMETERS
A _
2.93 + 0.20
Simplify Circuit Design. B 1.30+0.20/-0.15
Reduce a Quantity of Parts and Manufacturing Process. C 1.30 MAX
D
2 3 D 0.40+0.15/-0.05
A
G
E 2.40+0.30/-0.20
H
1 G 1.90
H 0.95
EQUIVALENT CIRCUIT J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
L 0.55
P P
M 0.20 MIN
OUT N 1.00+0.20/-0.10
N
C
P 7
J
Q Max 0.1.
R1
K
M
IN
R2 BIAS RESISTOR VALUES
TYPE NO. R1(k ) R2(k )
COMMON(+) KRA119S 4.7 10
SOT-23
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage VO -50 V
Marking
Input Voltage VI -25, 7 V
Lot No.
Output Current IO -150 mA
Power Dissipation PD 200 mW Type Name
P6
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Output Cut-off Current IO(OFF) VO=-50V, VI=0 - - -500 nA
DC Current Gain GI VO=-5V, IO=-10mA 30 - -
Output Voltage VO(ON) IO=-10mA, II=-0.5mA - -0.1 -0.3 V
Input Voltage (ON) VI(ON) VO=-0.3V, IO=-20mA - -1.76 -2.5 V
Input Voltage (OFF) VI(OFF) VCC=-5V, IO=-100 A -0.3 -0.82 - V
Transition Frequency fT* VO=-10V, IO=-5mA - 250 - MHz
Input Current II VI=-5V - - -1.8 mA
Input Resistor R1 - 3.29 4.7 6.11 k
Resistor Ratio R2/R1 - 1.7 2.1 2.6
Note : * Characteristic of Transistor Only.
2012. 8. 24 Revision No : 0 1/2
KRA119S
I O - V I(ON) I O - V I(OFF)
-100 -3k
OUTPUT CURRENT IO (mA)
-50
OUTPUT CURRENT I O (◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo