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SEMICONDUCTOR KRC231S~KRC235S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
INTERFACE CIRCUIT AND DRIVER E
L B L
CIRCUIT APPLICATION.
DIM MILLIMETERS
A _
2.93 + 0.20
B 1.30+0.20/-0.15
FEATURES C 1.30 MAX
D
2 3 D 0.40+0.15/-0.05
With Built-in Bias Resistors.
A
G
E 2.40+0.30/-0.20
H
1 G 1.90
Simplify Circuit Design.
H 0.95
Reduce a Quantity of Parts and Manufacturing Process. J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
L 0.55
P P
M 0.20 MIN
N 1.00+0.20/-0.10
N
EQUIVALENT CIRCUIT
C
P 7
J
Q 0.1 MAX
K
M
C
1. EMITTER
R1 2. BASE
B 3. COLLECTOR
E SOT-23
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 15 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 600 mA
Collector Power Dissipation PC 200 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
MARK SPEC
TYPE KRC231S KRC232S KRC233S KRC234S KRC235S
MARK NW NY NZ NNA NNB
Marking
Type Name Lot No. Lot No.
Type Name
2011. 6. 29 Revision No : 6 1/3
KRC231S~KRC235S
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage BVCEO IC=1mA 15 - - V
Collector-Base Breakdown Voltage BVCBO IC=50 A 30 - - V
Emitter-Base Breakdown Voltage BVEBO IE=50 A 5.0 - - V
Collector Cut-off Current ICBO VCB=30V - - 0.5 A
Collector-Emitter Saturation Voltage VCE(sat) IC=50mA, IB=2.5mA - 40 80 mV
DC Current Gain hFE VCE=5V, IC=50mA 200 350 800 -
KRC231S 1.54 2.2 2.86
KRC232S 3.92 5.6 7.28
Input Resistor KRC233S R1 7 10 13 k
KRC234S 3.29 4.7 6.11
KRC235S 4.76 6.8 8.84
VCE=10V, IE=-50mA,
Transition Frequency fT* - 200 - MHz
f=100MHz
On Resistance Ron f=1kHz, IB=1mA, VIN=0.3V - 0.6 -
Note : * Characteristic of Transistor Only.
2011. 6. 29 Revision No : 6 2/3
KRC231S~KRC235S
h FE - I C VCE(sat) - I C
COLLECTOR-EMITTER SATURATION
2k 500
COMMON EMITTER
1k 300
VCE =5V
VOLTAGE VCE(sat) (mV)
DC CURRENT GAIN h FE
Ta=25 C
300 100
100 50
30
I C /I B =20
30 I C /I B =10
10
10
COMMON EMITTER 5
3 VCE =5V 3
Ta=25 C
1 1
0.1 0.3 1 3 10 30 100 300 1k 1 3 10 30 100 300 1k
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
R on - I B
1k 1k
300 I B =1mA
ON RESISTANCE R on ()
f=1kHz
~ V=0.3V
100 VB VV VA
30 VB
R ON = 1000 ( )
VA VB
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3 10 30 100
BASE CURRENT I B (mA)
2011. 6. 29 Revision No : 6 3/3
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