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SEMICONDUCTOR KRC881T~KRC886T
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
E
K B K
FEATURES
DIM MILLIMETERS
High emitter-base voltage : VEBO=25V(Min) 1 6 A _
2.9 + 0.2
B 1.6+0.2/-0.1
High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) C _
0.70 + 0.05
G
2 5 _
Low on resistance : Ron=1 (Typ.) (IB=5mA) D 0.4 + 0.1
F
E 2.8+0.2/-0.3
A
With Built-in Bias Resistors. 3 4 F _
1.9 + 0.2
G
G 0.95
Simplify Circuit Design.
D
H _
0.16 + 0.05
Reduce a Quantity of Parts and Manufacturing Process. I 0.00-0.10
J 0.25+0.25/-0.15
K 0.60
C
L
L 0.55
EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT (TOP VIEW) I H
J J
C 6 5 4
1. Q1 EMITTER
2. Q1 BASE
R1 3. Q2 COLLECTOR
4. Q2 EMITTER
B 5. Q2 BASE
Q1
Q2 6. Q1 COLLECTOR
E 1 2 3 TS6
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 25 V
Collector Current IC 300 mA
Collector Power Dissipation PC * 0.9 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Package mounted on a ceramic board (600 0.8 )
MARK SPEC
hFE classification
TYPE
B Marking
6 5 4
KRC881T MQB h FE Rank Lot No.
KRC882T MRB
Type Name
KRC883T MSB
KRC884T MTB
1 2 3
KRC885T MUB
KRC886T MVB
2002. 12. 5 Revision No : 2 1/2
KRC881T~KRC886T
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage BVCEO IC=1mA 20 - - V
Collector-Base Breakdown Voltage BVCBO IC=50 A 50 - - V
Emitter-Base Breakdown Voltage BVEBO IE=50 A 25 - - V
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 0.1 A
Collector-Emitter Saturation Voltage VCE(sat) IC=30mA, IB=3mA - - 0.1 V
DC Current Gain hFE VCE=2V, IC=4mA 350 - 1200
KRC881T - 2.2 -
KRC882T - 4.7 -
KRC883T - 5.6 -
Input Resistor R1 k
KRC884T - 6.8 -
KRC885T - 10 -
KRC886T - 22 -
Transition Frequency fT * VCE=6V, IC=4mA, - 30 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 4.8 - pF
* Characteristic of Transistor Only.
Note) hFE Classification B:350 1200
2002. 12. 5 Revision No : 2 2/2
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