Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors KEC krc827e_829e
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SEMICONDUCTOR KRC827E~KRC829E
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B
B1
FEATURES
With Built-in Bias Resistors. 1 6 DIM MILLIMETERS
C
A _
1.6 + 0.05
Simplify Circuit Design.
A1
_
A
A1 1.0 + 0.05
2 5 _
C
Reduce a Quantity of Parts and Manufacturing Process. B 1.6 + 0.05
B1 _
1.2 + 0.05
D
High Packing Density. 3 4 C 0.50
D _
0.2 + 0.05
H _
0.5 + 0.05
J _
0.12 + 0.05
P P
P 5
EQUIVALENT CIRCUIT BIAS RESISTOR VALUES
H
OUT TYPE NO. R1(k ) R2(k )
J
KRC827E 10 47
R1 1. Q1 COMMON (EMITTER)
IN KRC828E 22 47 2. Q2 COMMON (EMITTER)
3. Q2 IN (BASE)
R2
KRC829E 47 22 4. Q2 OUT (COLLECTOR)
5. Q1 IN (BASE)
6. Q1 OUT (COLLECTOR)
COMMON
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
6 5 4
Q1
Q2
1 2 3
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage KRC827E 829E VO 50 V
KRC827E 30, -6
Input Voltage KRC828E VI 40, -7 V
KRC829E 40,-15
Output Current IO 100 mA
Power Dissipation PD * 200 mW
KRC827E 829E
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Total Rating.
Marking 6 5 4
Lot No.
MARK SPEC
TYPE KRC827E KRC828E KRC829E Type Name
MARK YH YI YJ
1 2 3
2008. 9. 23 Revision No : 2 1/4
KRC827E~KRC829E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Output Cut-off Current KRC827E 829E IO(OFF) VO=50V, VI=0 - - 500 nA
KRC827E 80 150 -
DC Current Gain KRC828E GI VO=5V, IO=10mA 80 150 -
KRC829E 70 140 -
Output Voltage KRC827E 829E VO(ON) IO=10mA, II=0.5mA - 0.1 0.3 V
KRC827E - 1.2 1.8
Input Voltage (ON) KRC828E VI(ON) VO=0.2V, IO=5mA - 1.8 2.6 V
KRC829E - 3.0 5.8
KRC827E 0.5 0.75 -
Input Votlage (OFF) KRC828E VI(OFF) VO=5V, IO=0.1mA 0.6 0.88 - V
KRC829E 1.5 1.82 -
Transition Frequency KRC827E 829E fT * VO=10V, IO=5mA - 200 - MHz
KRC827E - - 0.88
Input Current KRC828E II VI=5V - - 0.36 mA
KRC829E - - 0.16
KRC827E - 0.05 -
Rise
KRC828E tr - 0.12 -
Time
KRC829E - 0.26 -
KRC827E - 2.0 -
Switching Storage VO=5V, VIN=5V
KRC828E tstg - 2.4 - S
Time Time RL=1k
KRC829E - 1.5 -
KRC827E - 0.36 -
Fall
KRC828E tf - 0.4 -
Time
KRC829E - 0.41 -
Note : * Characteristic of Transistor Only.
2008. 9. 23 Revision No : 2 2/4
KRC827E~KRC829E
IO - VI(ON) IO - VI(OFF)
KRC827E KRC827E
50 3k
-25 25
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