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tip112f


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                                     SEMICONDUCTOR                                                                               TIP112F
                                            TECHNICAL DATA                                  EPITAXIAL PLANAR NPN TRANSISTOR


  MONOLITHIC CONSTRUCTION WITH BUILT IN
  BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
                                                                                                        A                                     C

                                                                                                                                                        DIM      MILLIMETERS




                                                                                                                            F
                                                                                    S
  FEATURES                                                                                                                                               A                _
                                                                                                                                                                    10.0 + 0.3




                                                                                                                                     P
                                                                                                                                                         B                _
                                                                                                                                                                    15.0 + 0.3
                                                                                        E
    High DC Current Gain.                                                                                                                                C                _
                                                                                                                                                                    2.70 + 0.3




                                                                                                                                B
                                                                                                                                                         D       0.76+0.09/-0.05
        : hFE=1000(Min.),      VCE=4V, IC=1A.




                                                                                                                            G
                                                                                                                                                         E          3.2 + 0.2
                                                                                                                                                                          _
                                                                                                                                                         F               _
                                                                                                                                                                     3.0 + 0.3
    Low Collector-Emitter Saturation Voltage.                                                                                                            G                _
                                                                                                                                                                    12.0 + 0.3
                                                                                                                                                         H        0.5+0.1/-0.05
    Complementary to TIP117F.                                                                                                                                             _
                                                                                            L                           L                                J          13.6 + 0.5




                                                                                    K
                                                                                                                                              R                          _
                                                                                                                                                         K           3.7 + 0.2
                                                                                                                                                         L        1.2+0.25/-0.1
                                                                                                                    M
                                                                                                                                                        M         1.5+0.25/-0.1




                                                                                                                                J
                                                                                            D                        D                                  N                 _
                                                                                                                                                                    2.54 + 0.1
                                                                                                                                                        P                _
                                                                                                                                                                     6.8 + 0.1
                                                                                                                                                                         _
  MAXIMUM RATING (Ta=25                 )                                                                                                               Q            4.5 + 0.2
                                                                                                                                                        R                _
                                                                                                                                                                     2.6 + 0.2
                                                                                                    N       N                                  H         S           0.5 Typ
         CHARACTERISTIC                   SYMBOL    RATING      UNIT
   Collector-Base Voltage                   VCBO      100        V
                                                                                                                                    1. BASE




                                                                                                                            Q
   Collector-Emitter Voltage                VCEO      100        V                              1       2       3
                                                                                                                                    2. COLLECTOR
   Emitter-Base Voltage                     VEBO          5      V                                                                  3. EMITTER

                             DC              IC           2
   Collector Current                                             A
                             Pulse          ICP           4                                                                     TO-220IS

   Base Current              DC              IB       50        mA

   Collector Power           Ta=25                        2
                                             PC                  W
   Dissipation               Tc=25                    20                           EQUIVALENT CIRCUIT

   Junction Temperature                      Tj       150                                                                                                        C

   Storage Temperature Range                Tstg    -65 150                                     B




                                                                                                                            R1                     R2

                                                                                                                        = 10k                 = 0.6k
                                                                                                                                                                 E




  ELECTRICAL CHARACTERISTICS (Ta=25                   )
                  CHARACTERISTIC                    SYMBOL             TEST CONDITION                               MIN.              TYP.              MAX.            UNIT
                                                      ICEO       VCE=50V, IB=0                                          -                -               2
   Collector Cut-off Current                                                                                                                                             mA
                                                      ICBO       VCB=100V, IE=0                                         -                -               1
   Emitter Cut-off Current                            IEBO       VEB=5V, IC=0                                           -                -               2               mA
                                                                 VCE=4V, IC=1A                                      1000                 -                   -
   DC Current Gain                                        hFE
                                                                 VCE=4V, IC=2A                                      500                  -                   -
   Collector-Emitter Sustaining Voltage             VCEO(SUS)    IC=30mA, IB=0                                      100                  -                   -             V
   Collector-Emitter Saturation Voltage              VCE(sat)    IC=2A, IB=8mA                                          -                -               2.5               V
   Base-Emitter On Voltage                           VBE(ON)     VCE=4V, IC=2A                                          -                -               2.8               V
   Collector Output Capacitance                           Cob    VCB=10V, IE=0, f=0.1MHz                                -                -              100               pF




2007. 5. 21                       Revision No : 0                                                                                                                                  1/2
                                                                                                                 TIP112F


                                                                     I   C   - V CE                                                                                                    h FE - I C
                                      2.0                                                                                                               100K
                                                                       



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