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SEMICONDUCTOR TIP117F
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
A C
DIM MILLIMETERS
F
S
FEATURES A _
10.0 + 0.3
P
B _
15.0 + 0.3
E
High DC Current Gain. C _
2.70 + 0.3
B
D 0.76+0.09/-0.05
: hFE=1000(Min.), VCE=-4V, IC=-1A.
G
E 3.2 + 0.2
_
F _
3.0 + 0.3
Low Collector-Emitter Saturation Voltage. G _
12.0 + 0.3
H 0.5+0.1/-0.05
Complementary to TIP112F. _
L L J 13.6 + 0.5
K
R _
K 3.7 + 0.2
L 1.2+0.25/-0.1
M
M 1.5+0.25/-0.1
J
D D N _
2.54 + 0.1
P _
6.8 + 0.1
_
MAXIMUM RATING (Ta=25 ) Q 4.5 + 0.2
R _
2.6 + 0.2
N N H S 0.5 Typ
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -100 V
1. BASE
Q
Collector-Emitter Voltage VCEO -100 V 1 2 3
2. COLLECTOR
Emitter-Base Voltage VEBO -5 V 3. EMITTER
DC IC -2
Collector Current A TO-220IS
Pulse ICP -4
Base Current DC IB -50 mA
Collector Power Ta=25 2 EQUIVALENT CIRCUIT
PC W
Dissipation Tc=25 20
C
Junction Temperature Tj 150
B
Storage Temperature Range Tstg -65 150
R1 R2
= 10k = 0.6k
E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICEO VCE=-50V, IB=0 - - -2
Collector Cut-off Current mA
ICBO VCB=-100V, IE=0 - - -1
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -2 mA
VCE=-4V, IC=-1A 1000 - -
DC Current Gain hFE
VCE=-4V, IC=-2A 500 - -
Collector-Emitter Sustaining Voltage VCEO(SUS) IC=-30mA, IB=0 -100 - - V
Collector-Emitter Saturation Voltage VCE(sat) IC=-2A, IB=-8mA - - -2.5 V
Base-Emitter On Voltage VBE(ON) VCE=-4V, IC=-2A - - -2.8 V
Collector Output Capacitance Cob VCB=-10V, IE=0, f=0.1MHz - - 200 pF
2007. 5. 21 Revision No : 0 1/2
TIP117F
I C - V CE h FE - I C
-5 100K
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