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SEMICONDUCTOR TIP35C
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION.
A Q B
K
F
FEATURES
I
Recommended for 75W Audio Frequency
E
Amplifier Output Stage.
C
DIM MILLIMETERS
Complementary to TIP36C. A 15.9 MAX
J
H
B 4.8 MAX
Icmax:25A. C _
20.0 + 0.3
G
D _
2.0 + 0.3
D d 1.0+0.3/-0.25
E 2.0
L
F 1.0
G 3.3 MAX
d
H 9.0
MAXIMUM RATING (Ta=25 ) I 4.5
P P T M J 2.0
CHARACTERISTIC SYMBOL RATING UNIT K 1.8 MAX
L _
20.5 + 0.5
Collector-Base Voltage VCBO 100 V M 2.8
P _
5.45 + 0.2
Collector-Emitter Voltage VCEO 100 V 1 2 3 Q 3.2 + 0.2
_
T 0.6+0.3/-0.1
Emitter-Base Voltage VEBO 5 V 1. BASE
2. COLLECTOR
Collector Current IC 25 A 3. EMITTER
Base Current IB 5.0 A
Collector Power Dissipation
PC 125 W TO-3P(N)
(Tc=25 )
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=100V, IE=0 - - 10 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 10 A
Collector-emitter Breakdown Voltage V(BR)CEO IC=50mA, IB=0 100 - - V
hFE(1) (Note) VCE=5V, IC=1.5A 55 - 160
DC Current Gain
hFE(2) VCE=4V, IC=15A 15 - -
VCE(sat)(1) IC=15A, IB=1.5A - - 1.8
Collector-Emitter Saturation Voltage V
VCE(sat)(2) IC=25A, IB=5.0A - - 4.0
Base-Emitter Voltage VBE VCE=5V, IC=5A - - 1.5 V
Transition Frequency fT VCE=5V, IC=1A 3.0 - - MHz
Note : hFE(1) Classification R:55~110, O:80~160
2001. 1. 18 Revision No : 3 1/2
TIP35C
2001. 1. 18 Revision No : 3 2/2
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