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SEMICONDUCTOR TIP32CF
TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
A C
FEATURES
DIM MILLIMETERS
F
S
Complementary to TIP31CF. A _
10.0 + 0.3
P
B _
15.0 + 0.3
E
C _
2.70 + 0.3
B
D 0.76+0.09/-0.05
G
E 3.2 + 0.2
_
F _
3.0 + 0.3
G _
12.0 + 0.3
MAXIMUM RATING (Ta=25 ) H 0.5+0.1/-0.05
L L J _
13.6 + 0.5
K
R
CHARACTERISTIC SYMBOL RATING UNIT K _
3.7 + 0.2
L 1.2+0.25/-0.1
M
Collector-Base Voltage VCBO -100 V M 1.5+0.25/-0.1
J
D D N _
2.54 + 0.1
P _
6.8 + 0.1
Collector-Emitter Voltage VCEO -100 V
Q _
4.5 + 0.2
R _
2.6 + 0.2
Emitter-Base Voltage VEBO -5 V N N H S 0.5 Typ
DC IC -3
Collector Current A
Pulse ICP -5
1. BASE
Q
1 2 3
Base Current IB -1 A 2. COLLECTOR
3. EMITTER
Collector Power Ta=25 2 W
PC
Dissipation Tc=25 25 W
TO-220IS
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Emitter Sustaining Voltage VCEO(SUS) IC=-30mA, IB=0 -100 - - V
Collector Cut-off Current ICEO VCE=-60V, IB=0 - - -0.3 mA
Collector Cut-off Current ICES VCE=-100V, VEB=0 - - -200 A
Emitter Cut-off Current IEBO VBE=-5V, IC=0 - - -1 mA
VCE=-4V, IC=-1A 25 - -
DC Current Gain hFE
VCE=-4V, IC=-3A 10 - 50
Collector-Emitter Saturation Voltage VCE(sat) IC=-3A, IB=-375mA - - -1.2 V
Base-Emitter On Voltage VBE(on) VCE=-4V, IC=-3A - - -1.8 V
Transition Frequency fT VCE=-10V, IC=-500mA f=1MHz 3.0 - - MHz
2007. 5. 21 Revision No : 0 1/2
TIP32CF
h FE - I C V CE(sat) ,VBE(sat) - I C
1k -10k
VCE =-4V I C /I B =10
500 -5k
300
SATURATION VOLTAGE
-3k
DC CURRENT GAIN hFE
V CE(sat) ,VBE(sat) (mV)
100 -1k VBE(sat)
50 -500
30 -300
10 -100
5 -50 VCE(sat)
3 -30
1 -10
-1 -3 -10 -30 -100 -300 -1k -3k -10k -1 -3 -10 -30 -100 -300 -1k -3k -10k
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
P C - Ta SAFE OPERATING AREA
COLLECTOR POWER DISSIPATION P C (W)
30 -10
COLLECTOR CURRENT I C (A)
I C MAX.(PULSE) *
-5
25
I C MAX.
10
-3
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