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SEMICONDUCTOR TIP33C
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION.
A Q B
K
F
FEATURES
I
E
Complementary to TIP34C.
C
Recommended for 45W 50W Audio Frequency DIM MILLIMETERS
A 15.9 MAX
J
Amplifier Output Stage.
H
B 4.8 MAX
C _
20.0 + 0.3
G
D _
2.0 + 0.3
D d 1.0+0.3/-0.25
E 2.0
L
F 1.0
G 3.3 MAX
MAXIMUM RATING (Ta=25 ) d
H 9.0
I 4.5
CHARACTERISTIC SYMBOL RATING UNIT P P T M J 2.0
K 1.8 MAX
VCBO _
Collector-Base Voltage 100 V L 20.5 + 0.5
M 2.8
VCEO _
Collector-Emitter Voltage 100 V P 5.45 + 0.2
1 2 3 Q 3.2 + 0.2
_
VEBO T 0.6+0.3/-0.1
Emitter-Base Voltage 6 V 1. BASE
Collector Current IC 10 A 2. COLLECTOR (HEAT SINK)
3. EMITTER
Base Current IB 3 A
Collector Power Dissipation
PC 80 W
(Tc=25 ) TO-3P(N)
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=100V, IE=0 - - 10 A
Emitter Cut-off Current IEBO VEB=6V, IC=0 - - 10 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=25mA, IB=0 100 - - V
DC Current Gain hFE (Note) VCE=4V, IC=2A 55 - 160
Collector-Emitter Saturation Voltage VCE(sat) IC=4A, IB=0.4A - - 1.0 V
Transition Frequency fT VCE=12V, IC=0.5A - 20 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 150 - pF
Note : hFE Classification R:55~110, O:80~160
2001. 1. 10 Revision No : 1 1/2
TIP33C
2001. 1. 10 Revision No : 1 2/2
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