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SEMICONDUCTOR 2N2906E
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION. B
B1
FEATURES
1 6 DIM MILLIMETERS
C
Low Leakage Current A _
1.6 + 0.05
A1
_
A
A1 1.0 + 0.05
: ICEX=-50nA(Max.), IBL=-50nA(Max.) 2 5 _
C
B 1.6 + 0.05
@VCE=-30V, VEB=-3V. B1 _
1.2 + 0.05
D
3 4 C 0.50
Excellent DC Current Gain Linearity. D _
0.2 + 0.05
H _
0.5 + 0.05
Low Saturation Voltage _
J 0.12 + 0.05
P P
: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. P 5
Low Collector Output Capacitance
H
: Cob=4.5pF(Max.) @VCB=5V.
J
1. Q 1 EMITTER
2. Q 1 BASE
3. Q 2 COLLECTOR
4. Q 2 EMITTER
5. Q 2 BASE
MAXIMUM RATING (Ta=25 ) 6. Q 1 COLLECTOR
CHARACTERISTIC SYMBOL RATING UNIT
TES6
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -200 mA EQUIVALENT CIRCUIT (TOP VIEW)
Base Current IB -50 mA 6 5 4
Collector Power Dissipation PC 200 mW
Junction Temperature Tj 150
Q1 Q2
Storage Temperature Range Tstg -55 150
* Total Rating
1 2 3
Marking
6 5 4
Lot No.
Type Name
ZA
1 2 3
2008. 9. 23 Revision No : 3 1/2
2N2906E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICEX VCE=-30V, VEB=-3V - - -50 nA
Base Cut-off Current IBL VCE=-30V, VEB=-3V - - -50 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A, IE=0 -40 - - V
Collector-Emitter Breakdown Voltage * V(BR)CEO IC=-1mA, IB=0 -40 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A, IC=0 -5.0 - - V
hFE(1) VCE=-1V, IC=-0.1mA 60 - -
hFE(2) VCE=-1V, IC=-1mA 80 - -
DC Current Gain * hFE(3) VCE=-1V, IC=-10mA 100 - 300
hFE(4) VCE=-1V, IC=-50mA 60 - -
hFE(5) VCE=-1V, IC=-100mA 30 - -
VCE(sat)1 IC=-10mA, IB=-1mA - - -0.25
Collector-Emitter Saturation Voltage * V
VCE(sat)2 IC=-50mA, IB=-5mA - - -0.4
VBE(sat)1 IC=-10mA, IB=-1mA -0.65 - -0.85
Base-Emitter Saturation Voltage * V
VBE(sat)2 IC=-50mA, IB=-5mA - - -0.95
Transition Frequency fT VCE=-20V, IC=-10mA, f=100MHz 250 - - MHz
Collector Output Capacitance Cob VCB=-5V, IE=0, f=1MHz - - 4.5 pF
Input Capacitance Cib VBE=-0.5V, IC=0, f=1MHz - - 10 pF
Input Impedance hie 2.0 - 12 k
Voltage Feedback Ratio hre 1.0 - 10 x10-4
VCE=-10V, IC=-1mA, f=1kHz
Small-Signal Current Gain hfe 100 - 400
Collector Output Admittance hoe 3.0 - 60
VCE=-5V, IC=-0.1mA,
Noise Figure NF - - 4.0 dB
Rg=1k , f=10Hz 15.7kHz
Vout
Delay Time td 10k - - 35
C Total 4pF
275
V in
0.5V 0 VCC =-3.0V
Rise Time tr -10.6V t r ,t f < 1ns, Du=2% - - 35
300ns
Switching Time nS
Vout
Storage Time tstg 10k - - 225
275
V in C Total 4pF
1N916
or equiv.
VCC =-3.0V
9.1V 0
Fall Time tf -10.9V - - 75
t r ,t f < 1ns, Du=2%
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