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SEMICONDUCTOR 2N3904E
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
B
FEATURES DIM MILLIMETERS
A _
1.60 + 0.10
D
Low Leakage Current 2 B _
0.85 + 0.10
_
G
0.70 + 0.10
A
: ICEX=50nA(Max.), IBL=50nA(Max.) C
1 3
H
D 0.27+0.10/-0.05
@VCE=30V, VEB=3V. E _
1.60 + 0.10
G _
1.00 + 0.10
Excellent DC Current Gain Linearity. H 0.50
J _
0.13 + 0.05
Low Saturation Voltage
: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. J
C
Low Collector Output Capacitance
: Cob=4pF(Max.) @VCB=5V.
Complementary to 2N3906E. 1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
ESM
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 200 mA
Base Current IB 50 mA
Collector Power Dissipation PC * 100 mW
Marking
Type Name
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150 ZC
2003. 12. 12 Revision No : 0 1/4
2N3904E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICEX VCE=30V, VEB=3V - - 50 nA
Base Cut-off Current IBL VCE=30V, VEB=3V - - 50 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 60 - - V
Collector-Emitter Breakdown Voltage * V(BR)CEO IC=1mA, IB=0 40 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 6.0 - - V
hFE(1) VCE=1V, IC=0.1mA 40 - -
hFE(2) VCE=1V, IC=1mA 70 - -
DC Current Gain * hFE(3) VCE=1V, IC=10mA 100 - 300
hFE(4) VCE=1V, IC=50mA 60 - -
hFE(5) VCE=1V, IC=100mA 30 - -
VCE(sat)1 IC=10mA, IB=1mA - - 0.2
Collector-Emitter Saturation Voltage * V
VCE(sat)2 IC=50mA, IB=5mA - - 0.3
VBE(sat)1 IC=10mA, IB=1mA 0.65 - 0.85
Base-Emitter Saturation Voltage * V
VBE(sat)2 IC=50mA, IB=5mA - - 0.95
Transition Frequency fT VCE=20V, IC=10mA, f=100MHz 300 - - MHz
Collector Output Capacitance Cob VCB=5V, IE=0, f=1MHz - - 4.0 pF
Input Capacitance Cib VBE=0.5V, IC=0, f=1MHz - - 8.0 pF
Input Impedance hie 1.0 - 10 k
Voltage Feedback Ratio hre 0.5 - 8.0 x10-4
VCE=10V, IC=1mA, f=1kHz
Small-Signal Current Gain hfe 100 - 400
Collector Output Admittance hoe 1.0 - 40
VCE=5V, IC=0.1mA Rg=1k ,
Noise Figure NF - - 5.0 dB
f=10Hz 15.7kHz
Vout
Delay Time td 10k - - 35
C Total< 4pF
275
V in
300ns
VCC =3.0V
Rise Time tr 10.9V - - 35
0
-0.5V t r ,t f < 1ns, Du=2%
Switching Time nS
Vout
Storage Time tstg 10k - - 200
275
V in C Total< 4pF
1N916
or equiv.
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