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2n3906u


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                                  SEMICONDUCTOR                                                  2N3906U
                                           TECHNICAL DATA              EPITAXIAL PLANAR PNP TRANSISTOR


  GENERAL PURPOSE APPLICATION.
  SWITCHING APPLICATION.

                                                                                             E
                                                                                    M        B    M

  FEATURES                                                                                                        DIM   MILLIMETERS
                                                                                                                   A           _
                                                                                                                          2.00 + 0.20
                                                                                                              D
    Low Leakage Current                                                                2                          B            _
                                                                                                                          1.25 + 0.15
                                                                                                                               _




                                                                      A
                                                                                                                          0.90 + 0.10




                                                                          J
                                                                                                                  C
      : ICEX=-50nA(Max.), IBL=-50nA(Max.)                                              1          3




                                                                              G
                                                                                                                  D     0.3+0.10/-0.05
       @VCE=-30V, VEB=-3V.                                                                                        E            _
                                                                                                                          2.10 + 0.20
                                                                                                                  G          0.65
    Excellent DC Current Gain Linearity.                                                                          H     0.15+0.1/-0.06
                                                                                                                  J          1.30
    Low Saturation Voltage
                                                                                                                  K       0.00-0.10
      : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.                                                                  L          0.70




                                                                          C
                                                                                                          H                    _




                                                                              L
                                                                                                                  M       0.42 + 0.10
    Low Collector Output Capacitance                                                                              N        0.10 MIN
                                                                                   N                  N
                                                                                           K
      : Cob=4.5pF(Max.) @VCB=-5V.
    Complementary to 2N3904U.
                                                                                   1. EMITTER
                                                                                   2. BASE
                                                                                   3. COLLECTOR


  MAXIMUM RATING (Ta=25                )
          CHARACTERISTIC                   SYMBOL    RATING    UNIT
                                                                                                      USM
   Collector-Base Voltage                    VCBO      -40      V
   Collector-Emitter Voltage                 VCEO      -40      V
   Emitter-Base Voltage                      VEBO      -5       V
   Collector Current                           IC     -200     mA
                                               IB
   Base Current                                        -50     mA                 Marking
   Collector Power Dissipation                PC       100     mW
                                                                                                                                Lot No.
   Junction Temperature                        Tj      150
   Storage Temperature Range                  Tstg   -55 150
                                                                      Type Name
                                                                                                 ZA




2008. 8. 29                      Revision No : 4                                                                                          1/4
                                                             2N3906U

 ELECTRICAL CHARACTERISTICS (Ta=25 )
              CHARACTERISTIC                   SYMBOL                    TEST CONDITION                              MIN.    TYP.   MAX.    UNIT
   Collector Cut-off Current                        ICEX   VCE=-30V, VEB=-3V                                           -      -     -50     nA
   Base Cut-off Current                             IBL    VCE=-30V, VEB=-3V                                           -      -     -50     nA
   Collector-Base Breakdown Voltage            V(BR)CBO    IC=-10 A, IE=0                                            -40      -       -      V
   Collector-Emitter Breakdown Voltage *       V(BR)CEO    IC=-1mA, IB=0                                             -40      -       -      V
   Emitter-Base Breakdown Voltage              V(BR)EBO    IE=-10 A, IC=0                                            -5.0     -       -      V
                                                hFE(1)     VCE=-1V, IC=-0.1mA                                         60      -       -
                                                hFE(2)     VCE=-1V, IC=-1mA                                           80      -       -
   DC Current Gain                         *    hFE(3)     VCE=-1V, IC=-10mA                                         100      -     300
                                                hFE(4)     VCE=-1V, IC=-50mA                                          60      -       -
                                                hFE(5)     VCE=-1V, IC=-100mA                                         30      -       -
                                               VCE(sat)1   IC=-10mA, IB=-1mA                                           -      -     -0.25
   Collector-Emitter Saturation Voltage    *                                                                                                 V
                                               VCE(sat)2   IC=-50mA, IB=-5mA                                           -      -     -0.4
                                               VBE(sat)1   IC=-10mA, IB=-1mA                                         -0.65    -     -0.85
   Base-Emitter Saturation Voltage         *                                                                                                 V
                                               VBE(sat)2   IC=-50mA, IB=-5mA                                           -      -     -0.95
   Transition Frequency                              fT    VCE=-20V, IC=-10mA, f=100MHz                              250      -       -     MHz
   Collector Output Capacitance                     Cob    VCB=-5V, IE=0, f=1MHz                                       -      -      4.5     pF
   Input Capacitance                                Cib    VBE=-0.5V, IC=0, f=1MHz                                     -      -      10      pF
   Input Impedance                                  hie                                                              2.0      -      12     k
   Voltage Feedback Ratio                           hre                                                              1.0      -      10     x10-4
                                                           VCE=-10V, IC=-1mA, f=1kHz
   Small-Signal Current Gain                        hfe                                                              100      -     400
   Collector Output Admittance                      hoe                                                              3.0      -      60
                                                           VCE=-5V, IC=-0.1mA,
   Noise Figure                                     NF                                                                 -      -      4.0     dB
                                                           Rg=1k       , f=10Hz 15.7kHz
                                                                                                           Vout

                            Delay Time               td                 10k                                            -      -      35
                                                                                                       C Total 4pF
                                                                                             275




                                                            V in



                                                             0.5V                                VCC =-3.0V
                                                                               0
                            Rise Time                tr    -10.6V
                                                                               t r ,t f < 1ns, Du=2%                   -      -      35
                                                                      300ns
   Switching Time                                                                                                                            nS
                                                                                                          Vout

                            Storage Time            tstg              10k                                              -      -     225
                                                                                            275




                                                            V in                                       C Total 4pF
                                                                      1N916
                                                                   or equiv.
                                                                                               VCC =-3.0V
                                                             9.1V
                                                     tf                        0
                            Fall Time                                          t r ,t f < 1ns, Du=2%                   -      -      75
                                                            -10.9V
                                                                       20



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