Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors KEC 2n5400s
<< Back | HomeMost service manuals and schematics are PDF files, so You will need Adobre Acrobat Reader to view : Acrobat Download Some of the files are DjVu format. Readers and resources available here : DjVu Resources
For the compressed files, most common are zip and rar. Please, extract files with Your favorite compression software ( WinZip, WinRAR ... ) before viewing. If a document has multiple parts, You should download all, before extracting.
Good luck. Repair on Your own risk. Make sure You know what You are doing.
Image preview - the first page of the document
>> Download 2n5400s documenatation <<
Text preview - extract from the document
SEMICONDUCTOR 2N5400S
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
E
L B L
DIM MILLIMETERS
FEATURES A _
2.93 + 0.20
High Collector Breakdwon Voltage B 1.30+0.20/-0.15
C 1.30 MAX
D
: VCBO=-130V, VCEO=-120V 2 3 D 0.45+0.15/-0.05
A
G
E 2.40+0.30/-0.20
Low Leakage Current.
H
1 G 1.90
: ICBO=-100nA(Max.) @VCB=-100V H 0.95
J 0.13+0.10/-0.05
Low Saturation Voltage K 0.00 ~ 0.10
L 0.55
P P
: VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA M 0.20 MIN
N 1.00+0.20/-0.10
Low Noise : NF=8dB (Max.)
N
C
P 7
J
M
K
1. EMITTER
MAXIMUM RATING (Ta=25 ) 2. BASE
3. COLLECTOR
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -130 V
Collector-Emitter Voltage VCEO -120 V SOT-23
Emitter-Base Voltage VEBO -5 V
Collector Current IC -600 mA
Base Current IB -100 mA
Collector Power Dissipation PC * 350 mW
Junction Temperature Tj 150 Marking
Lot No.
Storage Temperature Range Tstg -55 150
Note : * Package Mounted On 99.5% Alumina 10 8 0.6 ) Type Name
ZN
1999. 11. 30 Revision No : 2 1/2
2N5400S
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
VCB=-100V, IE=0 - - -100 nA
Collector Cut-off Current ICBO
VCB=-100V, IE=0, Ta=100 - - -100 A
Emitter Cut-off Current IEBO VEB=-3V, IC=0 - - -50 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=-0.1mA, IE=0 -130 - - V
Collector-Emitter *
V(BR)CEO IC=-1mA, IB=0 -120 - - V
Breakdown Voltage
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A, IC=0 -5 - - V
hFE(1) VCE=-5V, IC=-1mA 30 - -
DC Current Gain * hFE(2) VCE=-5V, IC=-10mA 40 - 180
hFE(3) VCE=-5V, IC=-50mA 40 - -
Collector-Emitter * VCE(sat)1 IC=-10mA, IB=-1mA - - -0.2
V
Saturation Voltage VCE(sat)2 IC=-50mA, IB=-5mA - - -0.5
Base-Emitter * VBE(sat)1 IC=-10mA, IB=-1mA - - -1.0
V
Saturation Voltage VBE(sat)2 IC=-50mA, IB=-5mA - - -1.0
Transition Frequency fT VCE=-10V, IC=-10mA, f=100MHz 100 - 400 MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - - 6 pF
Small-Signal Current Gain hfe VCE=-10V, IC=-1mA, f=1kHz 30 - 200
VCE=-5V, IC=-250 A
Noise Figure NF - - 8 dB
Rg=1k , f=10Hz 15.7kHz
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
1999. 11. 30 Revision No : 2 2/2
◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo