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SEMICONDUCTOR 2N5401
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
B C
FEATURES
A
High Collector Breakdwon Voltage
: VCBO=-160V, VCEO=-150V N DIM MILLIMETERS
E A 4.70 MAX
K
Low Leakage Current. G B 4.80 MAX
D C 3.70 MAX
: ICBO=-50nA(Max.) @VCB=-120V
J
D 0.45
E 1.00
Low Saturation Voltage
F 1.27
: VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA G 0.85
H 0.45
Low Noise : NF=8dB (Max.) H J _
14.00 + 0.50
F F K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
C
1 2 3
L
M
MAXIMUM RATING (Ta=25 ) 1. EMITTER
2. BASE
CHARACTERISTIC SYMBOL RATING UNIT 3. COLLECTOR
Collector-Base Voltage VCBO -160 V
Collector-Emitter Voltage VCEO -150 V TO-92
Emitter-Base Voltage VEBO -5 V
Collector Current IC -600 mA
Base Current IB -100 mA
Collector Power Dissipation
PC 625 mW
(Ta=25 )
Collector Power Dissipation
PC 1.5 W
(Tc=25 )
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
1997. 5. 13 Revision No : 0 1/2
2N5401
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
VCB=-120V, IE=0 - - -50 nA
Collector Cut-off Current ICBO
VCB=-120V, IE=0, Ta=100 - - -50 A
Emitter Cut-off Current IEBO VEB=-3V, IC=0 - - -50 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=-0.1mA, IE=0 -160 - - V
Collector-Emitter Breakdown Voltage * V(BR)CEO IC=-1mA, IB=0 -150 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A, IC=0 -5 - - V
hFE(1) VCE=-5V, IC=-1mA 50 - -
DC Current Gain * hFE(2) VCE=-5V, IC=-10mA 60 - 240
hFE(3) VCE=-5V, IC=-50mA 50 - -
Collector-Emitter * VCE(sat)1 IC=-10mA, IB=-1mA - - -0.2
V
Saturation Voltage VCE(sat)2 IC=-50mA, IB=-5mA - - -0.5
Base-Emitter * VBE(sat)1 IC=-10mA, IB=-1mA - - -1.0
V
Saturation Voltage VBE(sat)2 IC=-50mA, IB=-5mA - - -1.0
Transition Frequency fT VCE=-10V, IC=-10mA, f=100MHz 100 - 300 MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - - 6 pF
Small-Signal Current Gain hfe VCE=-10V, IC=-1mA, f=1kHz 40 - 200
VCE=-5V, IC=-250 A
Noise Figure NF - - 8 dB
Rg=1k , f=10Hz 15.7kHz
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
1997. 5. 13 Revision No : 0 2/2
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