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SEMICONDUCTOR 2N5551
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
B C
FEATURES
A
High Collector Breakdwon Voltage
: VCBO=180V, VCEO=160V N DIM MILLIMETERS
E A 4.70 MAX
K
Low Leakage Current. G B 4.80 MAX
D C 3.70 MAX
: ICBO=50nA(Max.), VCB=120V
J
D 0.45
E 1.00
Low Saturation Voltage
F 1.27
: VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA G 0.85
H 0.45
Low Noise : NF=8dB (Max.) H J _
14.00 + 0.50
F F K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
C
1 2 3
L
M
MAXIMUM RATING (Ta=25 ) 1. EMITTER
2. BASE
CHARACTERISTIC SYMBOL RATING UNIT 3. COLLECTOR
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 160 V TO-92
Emitter-Base Voltage VEBO 6 V
Collector Current IC 600 mA
Base Current IB 100 mA
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
1997. 5. 2 Revision No : 0 1/2
2N5551
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
VCB=120V, IE=0 - - 50 nA
Collector Cut-off Current ICBO
VCB=120V, IE=0, Ta=100 - - 50 A
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 50 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=0.1mA, IE=0 180 - - V
Collector-Emitter Breakdown Voltage * V(BR)CEO IC=1mA, IB=0 160 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 6 - - V
hFE(1) VCE=5V, IC=1mA 80 - -
DC Current Gain * hFE(2) VCE=5V, IC=10mA 80 - 250
hFE(3) VCE=5V, IC=50mA 30 - -
Collector-Emitter * VCE(sat)1 IC=10mA, IB=1mA - - 0.15
V
Saturation Voltage VCE(sat)2 IC=50mA, IB=5mA - - 0.2
Base-Emitter * VBE(sat)1 IC=10mA, IB=1mA - - 1.0
V
Saturation Voltage VBE(sat)2 IC=50mA, IB=5mA - - 1.0
Transition Frequency fT VCE=10V, IC=10mA, f=100MHz 100 - 300 MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - - 6 pF
Input Capacitance Cib VBE=0.5V, IC=0, f=1MHz - - 20 pF
Small-Signal Current Gain hfe VCE=10V, IC=1mA, f=1kHz 50 - 200
VCE=5V, IC=250 A
Noise Figure NF - - 8 dB
Rg=1k , f=10Hz 15.7kHz
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
1997. 5. 2 Revision No : 0 2/2
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