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2n5551s


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                                   SEMICONDUCTOR                                                     2N5551S
                                            TECHNICAL DATA                  EPITAXIAL PLANAR NPN TRANSISTOR


  GENERAL PURPOSE APPLICATION.
  HIGH VOLTAGE APPLICATION.
                                                                                                     E
                                                                                            L        B            L
                                                                                                                          DIM   MILLIMETERS
  FEATURES                                                                                                                 A            _
                                                                                                                                   2.93 + 0.20
    High Collector Breakdwon Voltage                                                                                       B    1.30+0.20/-0.15
                                                                                                                           C       1.30 MAX




                                                                                                                      D
        : VCBO=180V, VCEO=160V                                                              2                     3        D    0.45+0.15/-0.05




                                                                            A

                                                                                G
                                                                                                                           E    2.40+0.30/-0.20
    Low Leakage Current.




                                                                                        H
                                                                                            1                              G           1.90
        : ICBO=50nA(Max.) VCB=120V                                                                                         H           0.95
                                                                                                                           J    0.13+0.10/-0.05
    Low Saturation Voltage                                                                                                 K      0.00 ~ 0.10
                                                                                                                           L           0.55
                                                                                                P             P
        : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA                                                                              M       0.20 MIN
                                                                                                                           N    1.00+0.20/-0.10
    Low Noise : NF=8dB (Max.)




                                                                                        N
                                                                                    C
                                                                                                                           P           7




                                                                                                                      J
                                                                                                          M




                                                                                                 K
                                                                                                1. EMITTER
  MAXIMUM RATING (Ta=25                 )                                                       2. BASE
                                                                                                3. COLLECTOR
           CHARACTERISTIC                   SYMBOL       RATING      UNIT
    Collector-Base Voltage                     VCBO          180      V
    Collector-Emitter Voltage                  VCEO          160      V                                  SOT-23
    Emitter-Base Voltage                       VEBO              6    V
    Collector Current                           IC           600     mA
    Base Current                                IB           100     mA
    Collector Power Dissipation                PC *          350     mW
    Junction Temperature                        Tj           150
                                                                                        Marking
    Storage Temperature Range                   Tstg     -55 150                                                                  Lot No.

  Note : * Package Mounted On 99.5% Alumina 10 8       0.6   )
                                                                                Type Name
                                                                                                          ZF




1999. 11. 30                      Revision No : 2                                                                                                 1/2
                                                              2N5551S

  ELECTRICAL CHARACTERISTICS (Ta=25 )
               CHARACTERISTIC                  SYMBOL                TEST CONDITION      MIN.   TYP.   MAX.   UNIT
                                                            VCB=120V, IE=0                -      -      50    nA
    Collector Cut-off Current                     ICBO
                                                            VCB=120V, IE=0, Ta=100        -      -      50     A
    Emitter Cut-off Current                       IEBO      VEB=4V, IC=0                  -      -      50    nA

    Collector-Base Breakdown Voltage           V(BR)CBO     IC=0.1mA, IE=0               180     -       -     V

    Collector-Emitter                *
                                               V(BR)CEO     IC=1mA, IB=0                 160     -       -     V
    Breakdown Voltage

    Emitter-Base Breakdown Voltage             V(BR)EBO     IE=10 A, IC=0                 6      -       -     V

                                                 hFE(1)     VCE=5V, IC=1mA                80     -       -
    DC Current Gain                  *           hFE(2)     VCE=5V, IC=10mA               80     -     250
                                                 hFE(3)     VCE=5V, IC=50mA               30     -       -

    Collector-Emitter                *          VCE(sat)1   IC=10mA, IB=1mA               -      -     0.15
                                                                                                               V
    Saturation Voltage                          VCE(sat)2   IC=50mA, IB=5mA               -      -      0.2

    Base-Emitter                    *           VBE(sat)1   IC=10mA, IB=1mA               -      -      1.0
                                                                                                               V
    Saturation Voltage                          VBE(sat)2   IC=50mA, IB=5mA               -      -      1.0
    Transition Frequency                             fT     VCE=10V, IC=10mA, f=100MHz   100     -     300    MHz
    Collector Output Capacitance                     Cob    VCB=10V, IE=0, f=1MHz         -      -      6      pF
    Input Capacitance                                Cib    VBE=0.5V, IC=0, f=1MHz        -      -      20     pF
    Small-Signal Current Gain                        hfe    VCE=10V, IC=1mA, f=1kHz       50     -     200
                                                            VCE=5V, IC=250 A
    Noise Figure                                     NF                                   -      -      8      dB
                                                            Rg=1k   , f=10Hz 15.7kHz
  * Pulse Test : Pulse Width 300 S, Duty Cycle 2%.




1999. 11. 30                       Revision No : 2                                                                   2/2



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