Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors KEC 2n7000k
<< Back | HomeMost service manuals and schematics are PDF files, so You will need Adobre Acrobat Reader to view : Acrobat Download Some of the files are DjVu format. Readers and resources available here : DjVu Resources
For the compressed files, most common are zip and rar. Please, extract files with Your favorite compression software ( WinZip, WinRAR ... ) before viewing. If a document has multiple parts, You should download all, before extracting.
Good luck. Repair on Your own risk. Make sure You know what You are doing.
Image preview - the first page of the document
>> Download 2n7000k documenatation <<
Text preview - extract from the document
SEMICONDUCTOR 2N7000K
N Channel MOSFET
TECHNICAL DATA ESD Protected 2000V
INTERFACE AND SWITCHING APPLICATION.
FEATURES B C
ESD Protected 2000V.
High density cell design for low RDS(ON).
A
Voltage controlled small signal switch.
Rugged and reliable. N DIM MILLIMETERS
E A 4.70 MAX
K
High saturation current capablity. G B 4.80 MAX
D C 3.70 MAX
J
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
MAXIMUM RATING (Ta=25 ) H J _
14.00 + 0.50
F F K 0.55 MAX
CHARACTERISTIC SYMBOL RATING UNIT L 2.30
M 0.45 MAX
VDSS N 1.00
Drain-Source Voltage 60 V
C
1 2 3
L
M
Gate-Source Voltage VGSS 20 V 1. SOURCE
2. GATE
Continuous ID 500
3. DRAIN
Drain Current mA
Pulsed (Note 1) IDP 2000
Drain Power Dissipation PD 625 mW
TO-92
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Note 1) Pulse Width 10 , Duty Cycle 1%
EQUIVALENT CIRCUIT
D
G
S
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10 A 60 - - V
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 1 A
Gate-Body Leakage, Forward IGSSF VGS=20V, VDS=0V - - 10 A
Gate-Body Leakage, Reverse IGSSR VGS=-20V, VDS=0V - - -10 A
2009. 11. 17 Revision No : 1 1/4
2N7000K
ELECTRICAL CHARACTERISTICS (Ta=25 )
ON CHARACTERISTICS (Note 2)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1.1 - 2.35 V
VGS=10V, ID=500mA - 1.2 1.8
Drain-Source ON Resistance RDS(ON)
VGS=5V, ID=50mA - 1.5 2.1
VGS=10V, ID=500mA - 0.6 0.9
Drain-Source ON Voltage VDS(ON) V
VGS=5V, ID=50mA - 0.075 0.105
On State Drain Current ID(ON) VGS=10V, VDS= 2 VDS(ON) 500 - - mA
Forward Transconductance gFS VDS=10V, ID=500mA 200 580 - mS
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=200mA (Note1) - 760 1150 mV
Note 2) Pulse Test : Pulse Width 80 , Duty Cycle 1%
DYNAMIC CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Input Capacitance Ciss - 52.1 -
Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, f=1MHz - 3.9 - pF
Output Capacitance Coss - 7.7 -
Turn-On Time ton VDD=30V, RL=155 , ID=190mA, - 11.1 -
Switching Time nS
Turn-Off Time toff VGS=10V - 22.5 -
SWITCHING TIME TEST CIRCUIT
ton toff
td(off)
tr tf
td(on)
VDD 90% 90%
RL
VIN D VOUT
OUTPUT VOUT 10%
VGS
INVERTED
G
90%
50% 50%
S
INPUT
VIN 10%
PULSE WIDTH
2009. 11. 17 Revision No : 1 2/4
2N7000K
ID - VDS RDS(ON) - ID
DRAIN SOURCE ON - RESISTANCE RDS ( )
1.5 COMMON SOURCE 6.0
COMMON SOURCE
Ta = 25 C 10V 5V Ta = 25 C
5.0
DRAIN CURRENT ID (A)
1.2
6V
4.0
7V VGS = 3V
0.9
4V
3.0
0.6
2.0 4V
5V
0.3 1.0
VGS = 3V 6V 7V 10V
0.0 0.0
0.1 0.2 0.3 0.4 0.5 0.6
0.0 1.0 2.0 3.0 4.0 5.0
DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-CURRENT ID (A)
RDS(ON) - Tj SOURCE THRESHOLD VOLTAGE Vth (V)
Vth - Tj
4.0
DRAIN SOURCE ON - RESISTANCE
1.4
Common Source
3.5 VGS=VDS
1.3
ID=250 ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo