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SEMICONDUCTOR 2N7002
N CHANNEL ENHANCEMENT MODE
TECHNICAL DATA FIELD EFFECT TRANSISTOR
INTERFACE AND SWITCHING APPLICATION.
FEATURES E
High density cell design for low RDS(ON). L B L
DIM MILLIMETERS
Voltage controlled small signal switch. A _
2.93 + 0.20
Rugged and reliable. B 1.30+0.20/-0.15
C 1.30 MAX
D
2
High saturation current capablity. 3 D 0.45+0.15/-0.05
A
G
E 2.40+0.30/-0.20
H
1
G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
P P L 0.55
MAXIMUM RATING (Ta=25 ) M 0.20 MIN
N 1.00+0.20/-0.10
CHARACTERISTIC SYMBOL RATING UNIT
N
C
J
P 7
Drain-Source Voltage VDSS 60 V M
K
Gate-Source Voltage VGSS 20 V
1. SOURCE
Continuous ID 300 2. GATE
Drain Current mA 3. DRAIN
Pulsed (Note 1) IDP 1200
Drain Power Dissipation (Note 2) PD 300 mW
Junction Temperature Tj 150 SOT-23
Storage Temperature Range Tstg -55 150
Note 1) Pulse Width 10 , Duty Cycle 1%
Note 2) Package mounted on a glass epoxy PCB(100mm2 1mm)
EQUIVALENT CIRCUIT
D
Marking
G Lot No.
Type Name
WA
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10 A 60 - - V
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 1 A
Gate-Body Leakage, Forward IGSSF VGS=20V, VDS=0V - - 100 nA
Gate-Body Leakage, Reverse IGSSR VGS=-20V, VDS=0V - - -100 nA
2009. 11. 17 Revision No : 4 1/4
2N7002
ELECTRICAL CHARACTERISTICS (Ta=25 )
ON CHARACTERISTICS (Note 3)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1.1 1.8 2.3 V
VGS=10V, ID=500mA - 1.2 1.8
Drain-Source ON Resistance RDS(ON)
VGS=5V, ID=50mA - 1.5 2.1
VGS=10V, ID=500mA - 0.6 0.9
Drain-Source ON Voltage VDS(ON) V
VGS=5V, ID=50mA - 0.075 0.105
On State Drain Current ID(ON) VGS=10V, VDS= 2 VDS(ON) 500 - - mA
Forward Transconductance gFS VDS=10V, ID=500mA 200 580 - mS
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=200mA (Note1) - 0.78 1.15 V
(Note 3) Pulse Test : Pulse Width 80 , Duty Cycle 1%
DYNAMIC CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Input Capacitance Ciss - 47.1 -
Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, f=1MHz - 3.5 - pF
Output Capacitance Coss - 8.8 -
Turn-On Time ton VDD=30V, RL=155 , ID=190mA, - 8.8 -
Switching Time nS
Turn-Off Time toff VGS=10V - 14.8 -
SWITCHING TIME TEST CIRCUIT
V DD
t on t off
t d(on) tr t d(off) tf
RL 90% 90%
V IN D V OUT OUTPUT, V OUT 10% 10%
INVERTED
V GS
90%
G DUT
INPUT, V IN
50% 50%
10%
S
PULSE WIDTH
2009. 11. 17 Revision No : 4 2/4
2N7002
I D - V DS R DS(ON) - I D
DRAIN SOURCE ON- RESISTANCER
1.5 6
V 6V 5V
COMMON SOURCE 10 VGS=3V
Ta=25 C
DRAIN CURRENT ID (A)
5
1.2
4
RDS(ON) ()
0.9
4V
3
0.6 4V
2 10V 6V 5V
0.3 VGS =3V 1
COMMON SOURCE
Ta=25 C
0 0
0 1 2 3 4 5 0.1 0.2 0.3 0.4 0.5 0.6
DRAIN-SOURCE VOLTAGE V DS (V) DRAIN CURRENT I D (A)
R DS(ON) - T j ID - VGS
DRAIN SOURCE ON- RESISTANCE RDS ()
5 0.9
COMMON SOURCE
VGS =10V
DRAIN CURRENT I D (A)
4
0.6
3
125 C
2 VGS =5V -55 C
ID =50mA 0.3
1 25 C
VGS =10V
ID =500mA
0 0.0
-100 -50 0 50 100 150 0 1 2 3 4 5
JUNCTION TEMPERATURE T j ( C) GATE-SOURCE VOLTAGE VGS (V)
V th - T j I S - V SD
SOURCE THRESHOLD VOLTAGE Vth (V)
1.4 1
REVERSE DRAIN CURRENT I S (A)
COMMON SOURCE
VDS=VGS
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