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SEMICONDUCTOR 2N7002A
N CHANNEL ENHANCEMENT MODE
TECHNICAL DATA FIELD EFFECT TRANSISTOR
INTERFACE AND SWITCHING APPLICATION.
FEATURES E
High density cell design for low RDS(ON). L B L
DIM MILLIMETERS
Voltage controolled small signal switch. A _
2.93+ 0.20
Rugged and reliable. B 1.30+0.20/-0.15
C 1.30 MAX
D
2
High saturation current capablity. 3 D 0.45+0.15/-0.05
A
G
E 2.40+0.30/-0.20
H
1
G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
P P L 0.55
MAXIMUM RATING (Ta=25 ) M 0.20 MIN
N 1.00+0.20/-0.10
N
C
CHARACTERISTIC SYMBOL RATING UNIT
J
P 7
M
K
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage (RGS 1 ) VDGR 60 V
1. SOURCE
Gate-Source Voltage VGSS 20 V 2. GATE
3. DRAIN
Continuous ID 115
Drain Current mA
Pulsed IDP 800
Drain Power Dissipation PD 200 mW SOT-23
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Marking
EQUIVALENT CIRCUIT Lot No.
D
Type Name
WB
G
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10 A 60 - - V
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 1 A
Gate-Body Leakage, Forward IGSSF VGS=20V, VDS=0V - - 1 A
Gate-Body Leakage, Reverse IGSSR VGS=-20V, VDS=0V - - -1 A
2009. 7. 2 Revision No : 7 1/4
2N7002A
ELECTRICAL CHARACTERISTICS (Ta=25 )
ON CHARACTERISTICS (Note 1)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1 2.1 2.5 V
VGS=10V, ID=500mA - 1.8 5
Drain-Source ON Resistance RDS(ON)
VGS=5V, ID=50mA - - 5
VGS=10V, ID=500mA - 0.9 2.5
Drain-Source ON Voltage VDS(ON) V
VGS=5V, ID=50mA - - 0.25
On State Drain Current ID(ON) VGS=10V, VDS 2 VDS(ON) 500 - - mA
Forward Transconductance gFS VDS=2VDS(ON), ID=200mA 80 320 - mS
Note 1) Pulse Test : Pulse Width 300 , Duty Cycle 2.0%
DYNAMIC CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Input Capacitance Ciss - 20 50
Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, f=1MHz - 4 5 pF
Output Capacitance Coss - 11 25
Turn-On Time ton VDD=30V, RL=150 , ID=200mA, - - 20
Switching Time nS
Turn-Off Time toff VGS=10V, RGEN=25 - - 20
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RAINGS
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Maximum Continuous Drain-Source
IS - - - 115 mA
Diode Forward Current
Maximum Pulsed Drain-Source
ISM - - - 800 mA
Diode Forward Current
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=115mA (Note1) - 0.88 1.5 V
SWITCHING TIME TEST CIRCUIT
V DD
t on t off
t d(on) tr t d(off) tf
RL 90% 90%
V IN D V OUT OUTPUT, V OUT 10% 10%
INVERTED
V GS
R GEN 90%
G DUT
INPUT, V IN
50% 50%
10%
S
PULSE WIDTH
2009. 7. 2 Revision No : 7 2/4
2N7002A
I D - VDS R DS(ON) - T j
2.0 4.0
DRAIN SOURCE ON- RESISTANCE
COMMON SOURCE COMMON SOURCE
R DS(ON) () (NORMALIZED)
9V 8V VGS =10V
Ta=25 C
DRAIN CURRENT ID (A)
I D =500mA
1.5 10V 3.0
7V
6V
1.0 5V 2.0
4V
0.5 1.0
VGS =3V
0 0
0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 150
DRAIN-SOURCE VOLTAGE V DS (V) JUNCTION TEMPERATURE T j ( C)
R DS(ON) - I D I D - VGS
3.0 2.0
DRAIN SOURCE ON- RESISTANCE
COMMON SOURCE COMMON SOURCE
R DS(ON) () (NORMALIZED)
VGS =10V VGS =10V
DRAIN CURRENT I D (A)
C
2.5 1.6
2 5
C
=1
5
Ta
=-5
2.0 1.2
Ta
Ta=25 C
C
5
=2
Ta
1.5 0.8
1.0 0.4
0.5 0
0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10
DRAIN CURRENT I D (A) GATE-SOURCE VOLTAGE VGS (V)
Vth - T j I S - V SD
GATE-SOURCE THRESHOLD VOLTAGE
1.1 30
REVERSE DRAIN CURRENT I S (A)
COMMON
COMMON SOURCE 10 SOURCE
1.05 VDS =V GS VGS =0
V th (NORMALIZED)
I D =1mA 3
1.0
5 C
C
25 C
1
125
Ta=-5
Ta=
0.95
Ta=
0.3
0.9 0.1
0.85 0.03
0.8 0.01
-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4
JUNCTION TEMPERATURE T j ( C) BODY DIODE FORWARD VOLTAGE VSD (V)
2009. 7. 2 Revision No : 7 3/4
2N7002A
C - V DS VGS - Q g
100 10
GATE-SOURCE VOLTAGE VGS (V)
COMMON SOURCE
50 VDS =25V
8
CAPACITANCE C (pF)
I D =115mA
30
C iss
6
C oss
10
4
5 C rss
COMMON SOURCE
3 VGS =0 2
f=1MHz
Ta=25 C
1 0
1 3 5 10 30 50 0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE V DS (V) GATE CHARGE Q g (nC)
I D - V DS P D - Ta
DRAIN POWER DISSIPATION PD (mW)
2 350
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